All MOSFET. RU6888R Datasheet

 

RU6888R MOSFET. Datasheet pdf. Equivalent

Type Designator: RU6888R

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 68 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 88 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 65 nC

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 340 pF

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: TO220

RU6888R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU6888R Datasheet (PDF)

 ..1. Size:303K  ruichips
 ru6888r.pdf

RU6888R RU6888R

RU6888RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 68V/88A,RDS (ON) =6m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application Systems Inverte

 0.1. Size:450K  ruichips
 ru6888r3.pdf

RU6888R RU6888R

RU6888R3N-Channel Advanced Power MOSFETFeatures Pin Description 68V/88A,Insulation Slug RDS (ON) =6m(Typ.)@VGS=10V Insulation Slug(VISO1500VAC) Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedF t S it hi d F ll A l h R t d 100% avalanche tested 175C Operating TemperatureS Lead Free and Green

 8.1. Size:461K  ruichips
 ru6888.pdf

RU6888R RU6888R

RU6888N-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 68V/88A,RDS (ON) =6.0m (Type) @ VGS=10V Ultra Low On-ResistanceTO-220 TO-220F Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-263 TO-247 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications Switching Applicat

 8.2. Size:303K  ruichips
 ru6888m.pdf

RU6888R RU6888R

RU6888M N-Channel Advanced Power MOSFET Features Pin Description 60V/62A, RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested Lead Free and Green Devices Available PDFN5060 (RoHS Compliant) Applications Power Management. N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Uni

 8.3. Size:295K  ruichips
 ru6888s.pdf

RU6888R RU6888R

RU6888SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 68V/88A,RDS (ON) =6m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche testedTO-263 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application Systems Inverte

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF630 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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