RU6888R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RU6888R
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 120 W
Предельно допустимое напряжение сток-исток |Uds|: 68 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 88 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 65 nC
Время нарастания (tr): 15 ns
Выходная емкость (Cd): 340 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.008 Ohm
Тип корпуса: TO220
RU6888R Datasheet (PDF)
ru6888r.pdf
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RU6888RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 68V/88A,RDS (ON) =6m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application Systems Inverte
ru6888r3.pdf
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RU6888R3N-Channel Advanced Power MOSFETFeatures Pin Description 68V/88A,Insulation Slug RDS (ON) =6m(Typ.)@VGS=10V Insulation Slug(VISO1500VAC) Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedF t S it hi d F ll A l h R t d 100% avalanche tested 175C Operating TemperatureS Lead Free and Green
ru6888m.pdf
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RU6888M N-Channel Advanced Power MOSFET Features Pin Description 60V/62A, RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested Lead Free and Green Devices Available PDFN5060 (RoHS Compliant) Applications Power Management. N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Uni
ru6888.pdf
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RU6888N-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 68V/88A,RDS (ON) =6.0m (Type) @ VGS=10V Ultra Low On-ResistanceTO-220 TO-220F Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-263 TO-247 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications Switching Applicat
ru6888s.pdf
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RU6888SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 68V/88A,RDS (ON) =6m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche testedTO-263 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application Systems Inverte
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
![RU6888R](https://alltransistors.com/images/us.png)
![RU6888R](https://alltransistors.com/images/es.png)
![RU6888R](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: NCES120R018T4 | NCES120P075T4 | NCES120P035T4 | NCES075R026T4 | NCES075R026T | NCEP60ND60G | NCEP60ND30AG | NCEP40T14A | NCEP40ND80G | NCEP1580F | NCEP023NH85GU | NCEP023NH85AGU | NCEP018NH30QU | NCEP015NH30GU | NCEP015NH30AQU | NCEP015NH30AGU