RU6888R - аналоги, параметры транзистора - Справочник транзисторов

RU6888R даташит

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RU6888R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 68V/88A, RDS (ON) =6m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available Applications Switching Application Systems Inverte

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RU6888R3 N-Channel Advanced Power MOSFET Features Pin Description 68V/88A, Insulation Slug RDS (ON) =6m (Typ.)@VGS=10V Insulation Slug(VISO 1500VAC) Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated F t S it hi d F ll A l h R t d 100% avalanche tested 175 C Operating Temperature S Lead Free and Green

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RU6888M N-Channel Advanced Power MOSFET Features Pin Description 60V/62A, RDS (ON) =7m (Typ.)@VGS=10V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested Lead Free and Green Devices Available PDFN5060 (RoHS Compliant) Applications Power Management. N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Uni

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RU6888 N-Channel Advanced Power MOSFET MOSFET Features Pin Description 68V/88A, RDS (ON) =6.0m (Type) @ VGS=10V Ultra Low On-Resistance TO-220 TO-220F Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-263 TO-247 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available Applications Switching Applicat