PDN2313S Datasheet and Replacement. Cross Reference Search

PDN2313S Datasheet (PDF)

..1. Size:499K potens
pdn2313s.pdf pdf_icon

20V P-Channel MOSFETs PDN2313S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 65m -4.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-4.1A, RDS(ON) =65m@VGS = -4.5V performance, and withstand hi

8.1. Size:465K potens
pdn2318s.pdf pdf_icon

20V N-Channel MOSFETs PDN2318S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 65m 4A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 4A, RDS(ON) =65m@VGS = 4.5V performance, and withstand high energ

8.2. Size:395K potens
pdn2312s.pdf pdf_icon

20V N-Channel MOSFETs PDN2312S General Description BVDSS RDSON IDThese N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 19m 6.7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 6.7A, RDS(ON)=19m@VGS=4.5V performance, and withstand high ener

8.3. Size:498K potens
pdn2311s.pdf pdf_icon

20V P-Channel MOSFETs PDN2311S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 50m -4.7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-4.7A, RDS(ON)=50m@VGS=-4.5V performance, and withstand high

Datasheet: PDEC2210V , PDH0980 , PDH6902 , PDK3908 , PDK6912 , PDN2309S , PDN2311S , PDN2312S , IRFZ48N , PDN2318S , PDN3611S , PDN3612S , PDN3909S , PDN3912S , PDN3914S , PDN3916S , PDN4911S .