PDN2313S - аналоги и даташиты транзистора

 

PDN2313S - Даташиты. Аналоги. Основные параметры


   Наименование производителя: PDN2313S
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.56 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.1 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 17.4 ns
   Cossⓘ - Выходная емкость: 55 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
   Тип корпуса: SOT23-3S

 Аналог (замена) для PDN2313S

 

PDN2313S Datasheet (PDF)

 ..1. Size:499K  potens
 pdn2313s.pdf pdf_icon

PDN2313S

20V P-Channel MOSFETs PDN2313S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 65m -4.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-4.1A, RDS(ON) =65m @VGS = -4.5V performance, and withstand hi

 8.1. Size:465K  potens
 pdn2318s.pdf pdf_icon

PDN2313S

20V N-Channel MOSFETs PDN2318S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 65m 4A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 4A, RDS(ON) =65m @VGS = 4.5V performance, and withstand high energ

 8.2. Size:395K  potens
 pdn2312s.pdf pdf_icon

PDN2313S

20V N-Channel MOSFETs PDN2312S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 19m 6.7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 6.7A, RDS(ON)=19m @VGS=4.5V performance, and withstand high ener

 8.3. Size:498K  potens
 pdn2311s.pdf pdf_icon

PDN2313S

20V P-Channel MOSFETs PDN2311S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 50m -4.7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-4.7A, RDS(ON)=50m @VGS=-4.5V performance, and withstand high

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... PDEC2210V , PDH0980 , PDH6902 , PDK3908 , PDK6912 , PDN2309S , PDN2311S , PDN2312S , STP65NF06 , PDN2318S , PDN3611S , PDN3612S , PDN3909S , PDN3912S , PDN3914S , PDN3916S , PDN4911S .

 

 
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