PDN3909S Datasheet and Replacement. Cross Reference Search

PDN3909S Datasheet (PDF)

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30V P-Channel MOSFETs PDN3909S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 32m -5.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-5.1A, RDS(ON) =32m@VGS = -10V performance, and withstand hig

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PDN3912S 30V N-Channel MOSFETs General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 24m 6.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,6.5A, RDS(ON) =24m @VGS = 10V performance, and withstand high

9.2. Size:677K potens
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30V N-Channel MOSFETs PDN3914S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 25m 5.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,5.5A, RDS(ON) =25m @VGS = 10V performance, and withstand high en

9.3. Size:806K potens
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30V N-Channel MOSFETs PDN3916S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 35m 5.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,5.1A , RDS(ON)=35m@VGS=10V performance, and withstand high e

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .