PDN3909S Todos los transistores

 

PDN3909S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDN3909S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 122 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: SOT23-3S
 

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PDN3909S Datasheet (PDF)

 ..1. Size:940K  potens
 pdn3909s.pdf pdf_icon

PDN3909S

30V P-Channel MOSFETs PDN3909S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 32m -5.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-5.1A, RDS(ON) =32m@VGS = -10V performance, and withstand hig

 9.1. Size:689K  potens
 pdn3912s.pdf pdf_icon

PDN3909S

PDN3912S 30V N-Channel MOSFETs General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 24m 6.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,6.5A, RDS(ON) =24m @VGS = 10V performance, and withstand high

 9.2. Size:677K  potens
 pdn3914s.pdf pdf_icon

PDN3909S

30V N-Channel MOSFETs PDN3914S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 25m 5.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,5.5A, RDS(ON) =25m @VGS = 10V performance, and withstand high en

 9.3. Size:806K  potens
 pdn3916s.pdf pdf_icon

PDN3909S

30V N-Channel MOSFETs PDN3916S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 35m 5.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,5.1A , RDS(ON)=35m@VGS=10V performance, and withstand high e

MOSTRAR MÁS

Otros transistores... PDK6912 , PDN2309S , PDN2311S , PDN2312S , PDN2313S , PDN2318S , PDN3611S , PDN3612S , STP65NF06 , PDN3912S , PDN3914S , PDN3916S , PDN4911S , PDN6911S , PDP0959 , PDP0980 , PDP3960 .

History: NCE55P15I | 2SK2663

 

 
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