JVC103K Datasheet. Specs and Replacement

Type Designator: JVC103K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 169 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: TO220

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JVC103K datasheet

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 jvc103k.pdf pdf_icon

JVC103K

100V, 169A, 3.2m N-channel Power SGT MOSFET JVC103K Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 169 A Applications RDS(ON)_Typ(@VGS=10V 3.2 mW Load Switch PWM Application Power Management D G S TO-22... See More ⇒

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 jvc103t.pdf pdf_icon

JVC103K

JVC103T 100V 3.2mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% Rg Tested 100% UIS Tested, 100% RgTested ID (@ VGS = 10V) (1) 197 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.2 mW... See More ⇒

 9.1. Size:1124K  jiejie micro
 jvc105e.pdf pdf_icon

JVC103K

JVC105E 100V 4.5mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 135 A RDS(ON) (@ VGS = 10V) 4.5 mW Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Robotics Curr... See More ⇒

Detailed specifications: JVL101N, JVL102E, JVL102T, JVL102Y, JMTV3400A, JMTY11DN10A, JMTY2310A, JVC085T, HY1906P, JVC103T, JVC105E, JVC113T, JVC502E, SLA08N10G, SLA10N03T, SLB60R105E7D, SLB65R380E7C

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