PDEC2210V Spec and Replacement
Type Designator: PDEC2210V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 26 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: PPAK3X3
PDEC2210V Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PDEC2210V Specs
pdec2210v.pdf
20V N-Channel MOSFETs PDEC2210V V General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 12m 30A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V,30A, RDS(ON) =12m @VGS = 10V performance, and withstand high... See More ⇒
Detailed specifications: PDC3964X , PDC3964Z , PDC8974X , PDC906Z , PDD0906 , PDD3906 , PDD3908 , PDD6902 , STF13NM60N , PDH0980 , PDH6902 , PDK3908 , PDK6912 , PDN2309S , PDN2311S , PDN2312S , PDN2313S .
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