All MOSFET. PDEC2210V Datasheet

 

PDEC2210V Datasheet and Replacement


   Type Designator: PDEC2210V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: PPAK3X3
 

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PDEC2210V Datasheet (PDF)

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PDEC2210V

20V N-Channel MOSFETs PDEC2210V V General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 12m 30A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V,30A, RDS(ON) =12m @VGS = 10V performance, and withstand high

Datasheet: PDC3964X , PDC3964Z , PDC8974X , PDC906Z , PDD0906 , PDD3906 , PDD3908 , PDD6902 , IRF2807 , PDH0980 , PDH6902 , PDK3908 , PDK6912 , PDN2309S , PDN2311S , PDN2312S , PDN2313S .

History: 6N60KG-TMS4-T | CS5N70F | AP3N1R7MT | RFP5P15 | SHD224622 | LNH06R062 | VBZL150N03

Keywords - PDEC2210V MOSFET datasheet

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