PDEC2210V Datasheet. Specs and Replacement
Type Designator: PDEC2210V 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 26 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: PPAK3X3
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PDEC2210V substitution
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PDEC2210V datasheet
pdec2210v.pdf
20V N-Channel MOSFETs PDEC2210V V General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 12m 30A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V,30A, RDS(ON) =12m @VGS = 10V performance, and withstand high... See More ⇒
Detailed specifications: PDC3964X, PDC3964Z, PDC8974X, PDC906Z, PDD0906, PDD3906, PDD3908, PDD6902, STF13NM60N, PDH0980, PDH6902, PDK3908, PDK6912, PDN2309S, PDN2311S, PDN2312S, PDN2313S
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