PDN3612S Datasheet. Specs and Replacement

Type Designator: PDN3612S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: SOT23-3S

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PDN3612S datasheet

 ..1. Size:488K  potens
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PDN3612S

30V N-Channel MOSFETs PDN3612S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 32m 5.3A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V, 5.3 A, RDS(ON) =32m @VGS = 4.5V performance, and withstand high ... See More ⇒

 8.1. Size:426K  potens
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PDN3612S

30V P-Channel MOSFETs PDN3611S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 65m -4.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-4.1A, RDS(ON) =65m @VGS = -10V performance, and withstand hig... See More ⇒

Detailed specifications: PDK3908, PDK6912, PDN2309S, PDN2311S, PDN2312S, PDN2313S, PDN2318S, PDN3611S, IRFZ48N, PDN3909S, PDN3912S, PDN3914S, PDN3916S, PDN4911S, PDN6911S, PDP0959, PDP0980

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