PDK3908 Datasheet and Replacement
Type Designator: PDK3908
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12.5 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm
Package: SOT89
PDK3908 substitution
PDK3908 Datasheet (PDF)
pdk3908.pdf

30V N-Channel MOSFETs PDK3908 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 15.5m 7.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V, 7.5A, RDS(ON)=15.5m@VGS = 10V performance, and withstand high
Datasheet: PDC906Z , PDD0906 , PDD3906 , PDD3908 , PDD6902 , PDEC2210V , PDH0980 , PDH6902 , K2611 , PDK6912 , PDN2309S , PDN2311S , PDN2312S , PDN2313S , PDN2318S , PDN3611S , PDN3612S .
History: 2N5115UB
Keywords - PDK3908 MOSFET datasheet
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History: 2N5115UB



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