PDK3908 Datasheet. Specs and Replacement

Type Designator: PDK3908  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.47 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.5 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm

Package: SOT89

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PDK3908 datasheet

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PDK3908

30V N-Channel MOSFETs PDK3908 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 15.5m 7.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V, 7.5A, RDS(ON)=15.5m @VGS = 10V performance, and withstand high ... See More ⇒

Detailed specifications: PDC906Z, PDD0906, PDD3906, PDD3908, PDD6902, PDEC2210V, PDH0980, PDH6902, 8N60, PDK6912, PDN2309S, PDN2311S, PDN2312S, PDN2313S, PDN2318S, PDN3611S, PDN3612S

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