PDD3908 Specs and Replacement
Type Designator: PDD3908
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12.5 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO252
PDD3908 substitution
PDD3908 datasheet
pdd3908.pdf
30V N-Channel MOSFETs PDD3908 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 9m 55A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,55A, RDS(ON) =9m @VGS = 10V performance, and withstand high energ... See More ⇒
pdd3906.pdf
PDD3906 30V N-Channel MOSFETs General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 6m 80A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,80A, RDS(ON) =6m @VGS = 10V performance, and withstand high energ... See More ⇒
Detailed specifications: PDC3912Z , PDC3960X , PDC3964X , PDC3964Z , PDC8974X , PDC906Z , PDD0906 , PDD3906 , IRF520 , PDD6902 , PDEC2210V , PDH0980 , PDH6902 , PDK3908 , PDK6912 , PDN2309S , PDN2311S .
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