All MOSFET. PDD3908 Datasheet

 

PDD3908 Datasheet and Replacement


   Type Designator: PDD3908
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12.5 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO252
 

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PDD3908 Datasheet (PDF)

 ..1. Size:497K  potens
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PDD3908

30V N-Channel MOSFETs PDD3908 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 9m 55A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,55A, RDS(ON) =9m@VGS = 10V performance, and withstand high energ

 8.1. Size:497K  potens
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PDD3908

PDD3906 30V N-Channel MOSFETs General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 6m 80A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,80A, RDS(ON) =6m@VGS = 10V performance, and withstand high energ

Datasheet: PDC3912Z , PDC3960X , PDC3964X , PDC3964Z , PDC8974X , PDC906Z , PDD0906 , PDD3906 , STF13NM60N , PDD6902 , PDEC2210V , PDH0980 , PDH6902 , PDK3908 , PDK6912 , PDN2309S , PDN2311S .

History: R6006KNX

Keywords - PDD3908 MOSFET datasheet

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