JVC105E Datasheet and Replacement
Type Designator: JVC105E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 178 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 135 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 592 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
Package: TO220
JVC105E substitution
JVC105E Datasheet (PDF)
jvc105e.pdf
JVC105E100V 4.5mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 135 A RDS(ON) (@ VGS = 10V) 4.5 mW Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicle, Robotics Curr
jvc103k.pdf
100V, 169A, 3.2m N-channel Power SGT MOSFETJVC103KProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 169 AApplicationsRDS(ON)_Typ(@VGS=10V 3.2 mW Load Switch PWM Application Power ManagementDG STO-22
jvc103t.pdf
JVC103T100V 3.2mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS100 V Low Gate Charge Low Gate Charge VGS(th)_Typ3.2 V 100% UIS Tested, 100% Rg Tested 100% UIS Tested, 100% RgTested ID (@ VGS = 10V) (1) 197 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.2 mW
Datasheet: JVL102T , JVL102Y , JMTV3400A , JMTY11DN10A , JMTY2310A , JVC085T , JVC103K , JVC103T , IRF830 , JVC113T , JVC502E , , , , , , .
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