JMTY11DN10A Datasheet and Replacement
Type Designator: JMTY11DN10A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: SOT223
JMTY11DN10A substitution
JMTY11DN10A Datasheet (PDF)
jmty11dn10a.pdf
JMTY11DN10ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 100V, 5A Load SwitchR
Datasheet: JVE102G , JVE102T , JVE103T , JVL101N , JVL102E , JVL102T , JVL102Y , JMTV3400A , 20N50 , JMTY2310A , JVC085T , JVC103K , JVC103T , JVC105E , JVC113T , JVC502E , SLA08N10G .
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