JMTY11DN10A Specs and Replacement
Type Designator: JMTY11DN10A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: SOT223
JMTY11DN10A substitution
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JMTY11DN10A datasheet
jmty11dn10a.pdf
JMTY11DN10A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 100V, 5A Load Switch R ... See More ⇒
Detailed specifications: JVE102G, JVE102T, JVE103T, JVL101N, JVL102E, JVL102T, JVL102Y, JMTV3400A, 20N50, JMTY2310A, JVC085T, JVC103K, JVC103T, JVC105E, JVC113T, JVC502E, SLA08N10G
Keywords - JMTY11DN10A MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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