JVC103T Specs and Replacement
Type Designator: JVC103T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 277 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 197 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 1181 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: TO220
JVC103T substitution
- MOSFET ⓘ Cross-Reference Search
JVC103T datasheet
jvc103t.pdf
JVC103T 100V 3.2mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% Rg Tested 100% UIS Tested, 100% RgTested ID (@ VGS = 10V) (1) 197 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.2 mW... See More ⇒
jvc103k.pdf
100V, 169A, 3.2m N-channel Power SGT MOSFET JVC103K Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 169 A Applications RDS(ON)_Typ(@VGS=10V 3.2 mW Load Switch PWM Application Power Management D G S TO-22... See More ⇒
jvc105e.pdf
JVC105E 100V 4.5mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 135 A RDS(ON) (@ VGS = 10V) 4.5 mW Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Robotics Curr... See More ⇒
Detailed specifications: JVL102E, JVL102T, JVL102Y, JMTV3400A, JMTY11DN10A, JMTY2310A, JVC085T, JVC103K, IRFZ24N, JVC105E, JVC113T, JVC502E, SLA08N10G, SLA10N03T, SLB60R105E7D, SLB65R380E7C, SLC013RN06G
Keywords - JVC103T MOSFET specs
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