PDK6912 Datasheet. Specs and Replacement
Type Designator: PDK6912 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: SOT89
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PDK6912 substitution
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PDK6912 datasheet
pdk6912.pdf
60V N-Channel MOSFETs PDK6912 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 60V 75m 5A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features performance, and withstand high energy pulse in the 60V,5A, RDS(ON) =75... See More ⇒
Detailed specifications: PDD0906, PDD3906, PDD3908, PDD6902, PDEC2210V, PDH0980, PDH6902, PDK3908, P60NF06, PDN2309S, PDN2311S, PDN2312S, PDN2313S, PDN2318S, PDN3611S, PDN3612S, PDN3909S
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