All MOSFET. PDK6912 Datasheet

 

PDK6912 Datasheet and Replacement


   Type Designator: PDK6912
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.5 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SOT89
 

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PDK6912 Datasheet (PDF)

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PDK6912

60V N-Channel MOSFETs PDK6912 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 60V 75m 5A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features performance, and withstand high energy pulse in the 60V,5A, RDS(ON) =75

Datasheet: PDD0906 , PDD3906 , PDD3908 , PDD6902 , PDEC2210V , PDH0980 , PDH6902 , PDK3908 , AO3401 , PDN2309S , PDN2311S , PDN2312S , PDN2313S , PDN2318S , PDN3611S , PDN3612S , PDN3909S .

History: IXTI10N60P | 5N65L-TF3T-T | HAT2188WP | SLP5N65S | FQD7N20TM | AO8808A | TSM2318CX

Keywords - PDK6912 MOSFET datasheet

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