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PDK6912 Spec and Replacement


   Type Designator: PDK6912
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.5 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SOT89

 PDK6912 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PDK6912 Specs

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PDK6912

60V N-Channel MOSFETs PDK6912 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 60V 75m 5A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features performance, and withstand high energy pulse in the 60V,5A, RDS(ON) =75... See More ⇒

Detailed specifications: PDD0906 , PDD3906 , PDD3908 , PDD6902 , PDEC2210V , PDH0980 , PDH6902 , PDK3908 , P60NF06 , PDN2309S , PDN2311S , PDN2312S , PDN2313S , PDN2318S , PDN3611S , PDN3612S , PDN3909S .

History: PSMN018-100ESF | PDH0980 | HAT1065R

Keywords - PDK6912 MOSFET specs

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