JVC113T Datasheet and Replacement
Type Designator: JVC113T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 138 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 909 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO220
JVC113T substitution
JVC113T Datasheet (PDF)
jvc113t.pdf

100V, 138A, 3.8m N-channel Power SGT MOSFETJVC113TProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 138 ARDS(ON)_Typ(@VGS=10V 3.8 mWApplications Load Switch PWM Application Power ManagementDG SSchem
Datasheet: JVL102Y , JMTV3400A , JMTY11DN10A , JMTY2310A , JVC085T , JVC103K , JVC103T , JVC105E , K2611 , JVC502E , , , , , , , .
History: JVC105E
Keywords - JVC113T MOSFET datasheet
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History: JVC105E



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MOSFET: JVC502E | JVC113T | JVC105E | JVC103T | JVC103K | JVC085T | JMTY2310A | JMTY11DN10A | JMTV3400A | JVL102Y | JVL102T | JVL102E | JVL101N | JVE103T | JVE102T | JVE102G
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