JVC113T Specs and Replacement
Type Designator: JVC113T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 138 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 909 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO220
JVC113T substitution
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JVC113T datasheet
jvc113t.pdf
100V, 138A, 3.8m N-channel Power SGT MOSFET JVC113T Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 138 A RDS(ON)_Typ(@VGS=10V 3.8 mW Applications Load Switch PWM Application Power Management D G S Schem... See More ⇒
Detailed specifications: JVL102Y, JMTV3400A, JMTY11DN10A, JMTY2310A, JVC085T, JVC103K, JVC103T, JVC105E, 8N60, JVC502E, SLA08N10G, SLA10N03T, SLB60R105E7D, SLB65R380E7C, SLC013RN06G, SLD07RN10G, SLD10N65U
Keywords - JVC113T MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SLF8N65SV | NTD4909N | AOK22N50L | SLD2N65UZ | SPB80N06S2-05
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