All MOSFET. PDD6902 Datasheet

 

PDD6902 Datasheet and Replacement


   Type Designator: PDD6902
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 132 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 56.3 nS
   Cossⓘ - Output Capacitance: 445 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO252
 

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PDD6902 Datasheet (PDF)

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PDD6902

60V N-Channel MOSFETs PDD6902 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 60V 4.5m 90A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features performance, and withstand high energy pulse in the 60V,90A, RDS(ON)

Datasheet: PDC3960X , PDC3964X , PDC3964Z , PDC8974X , PDC906Z , PDD0906 , PDD3906 , PDD3908 , IRFB31N20D , PDEC2210V , PDH0980 , PDH6902 , PDK3908 , PDK6912 , PDN2309S , PDN2311S , PDN2312S .

History: TSM75N75CZ | AP4543GEH-HF | PDN2309S | NCE60N1K0I

Keywords - PDD6902 MOSFET datasheet

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