PDD6902 Datasheet and Replacement
Type Designator: PDD6902
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 132 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 56.3 nS
Cossⓘ - Output Capacitance: 445 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO252
PDD6902 substitution
PDD6902 Datasheet (PDF)
pdd6902.pdf

60V N-Channel MOSFETs PDD6902 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 60V 4.5m 90A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features performance, and withstand high energy pulse in the 60V,90A, RDS(ON)
Datasheet: PDC3960X , PDC3964X , PDC3964Z , PDC8974X , PDC906Z , PDD0906 , PDD3906 , PDD3908 , NCEP15T14 , PDEC2210V , PDH0980 , PDH6902 , PDK3908 , PDK6912 , PDN2309S , PDN2311S , PDN2312S .
Keywords - PDD6902 MOSFET datasheet
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History: AONS66520 | SRM6N70



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