PDD6902 Datasheet. Specs and Replacement
Type Designator: PDD6902 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 132 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 56.3 nS
Cossⓘ - Output Capacitance: 445 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO252
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PDD6902 datasheet
pdd6902.pdf
60V N-Channel MOSFETs PDD6902 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 60V 4.5m 90A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features performance, and withstand high energy pulse in the 60V,90A, RDS(ON) ... See More ⇒
Detailed specifications: PDC3960X, PDC3964X, PDC3964Z, PDC8974X, PDC906Z, PDD0906, PDD3906, PDD3908, IRF2807, PDEC2210V, PDH0980, PDH6902, PDK3908, PDK6912, PDN2309S, PDN2311S, PDN2312S
Keywords - PDD6902 MOSFET specs
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