PDS6904 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PDS6904
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 28.2 nS
Cossⓘ - Capacitancia de salida: 165 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de PDS6904 MOSFET
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PDS6904 datasheet
pds6904.pdf
60V N-Channel MOSFETs PDS6904 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 60V 12m 10A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 60V,10A, RDS(ON) =12m @VGS = 10V performance, and withstand high energ
pds6903.pdf
60V P-Channel MOSFETs PDS6903 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -60V 30m -8.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -60V,-8.5A, RDS(ON) =30m @VGS = -10V performance, and withstand high
pds6910.pdf
60V N-Channel MOSFETs PDS6910 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 60V 50m 5.5A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features performance, and withstand high energy pulse in the 60V,5.5A, RDS(ON) =
Otros transistores... PDS3712 , PDS3807 , PDS3812 , PDS3903 , PDS4810 , PDS4906 , PDS4909 , PDS6903 , IRF740 , PDS6910 , PMEB2516P , PMEN2423S , PTP4N65 , PTF4N65 , PTP80N06 , PTY80N06 , PTP80N60 .
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