PDS6904 Specs and Replacement
Type Designator: PDS6904
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28.2 nS
Cossⓘ - Output Capacitance: 165 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SOP8
PDS6904 substitution
- MOSFET ⓘ Cross-Reference Search
PDS6904 datasheet
pds6904.pdf
60V N-Channel MOSFETs PDS6904 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 60V 12m 10A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 60V,10A, RDS(ON) =12m @VGS = 10V performance, and withstand high energ... See More ⇒
pds6903.pdf
60V P-Channel MOSFETs PDS6903 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -60V 30m -8.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -60V,-8.5A, RDS(ON) =30m @VGS = -10V performance, and withstand high... See More ⇒
pds6910.pdf
60V N-Channel MOSFETs PDS6910 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 60V 50m 5.5A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features performance, and withstand high energy pulse in the 60V,5.5A, RDS(ON) =... See More ⇒
Detailed specifications: PDS3712, PDS3807, PDS3812, PDS3903, PDS4810, PDS4906, PDS4909, PDS6903, IRF740, PDS6910, PMEB2516P, PMEN2423S, PTP4N65, PTF4N65, PTP80N06, PTY80N06, PTP80N60
Keywords - PDS6904 MOSFET specs
PDS6904 cross reference
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