SK2310AA Todos los transistores

 ..1. Size:267K  cn shikues
 sk2310aa.pdf

N-Channel Enhancement Power Mosfet Specification Power Mosfet Specification SOT-23 Features Advanced trench cell design 3 High speed switch Applications Portable appliances Notebook/PC appliances Power Management 2 DC/DC Converter 1 Quick reference 1 Gate 2 Gate 2 Source 3 Drain BV 60 V ID=3A RDS(ON) 90 m @ VGS = 10 V RDS(ON) 11

 9.1. Size:449K  toshiba
 2sk2313.pdf

2SK2313 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2313 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 8 m (typ.) High forward transfer admittance Yfs = 60 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement mode

 9.2. Size:426K  toshiba
 2sk2314.pdf

2SK2314 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2314 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 66 m (typ.) High forward transfer admittance Yfs = 16 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 100 V) Enhancement mode

 9.3. Size:423K  toshiba
 2sk2311.pdf

2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2311 Chopper Regulator, DC-DC Converter and Switching Unit mm Regulator Applications 4 V gate drive Low drain-source ON resistance R = 36 m (typ.) DS (ON) High forward transfer admittance Y = 16 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS En

 9.4. Size:390K  toshiba
 2sk2312.pdf

2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2312 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 13 m (typ.) High forward transfer admittance Yfs = 40 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement mode

 9.5. Size:95K  sanyo
 2sk2318.pdf

 9.6. Size:145K  sanyo
 2sk2316.pdf

Ordering number EN5300A N-Channel Silicon MOSFET 2SK2316 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A-PCP Low-voltage drive (2.5V drive). [2SK2316] 1 Gate 2 Drain 3 Source SANYO PCP (Bottom View) Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condition

 9.7. Size:131K  sanyo
 2sk2317.pdf

Ordering number ENN5058 N-Channel Silicon MOSFET 2SK2317 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B 2.5V drive. [2SK2317] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SK2317] 6.5 2.3 5.0 0.5 4 0.5 0.85

 9.8. Size:77K  renesas
 2sk2315.pdf

Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to

 9.9. Size:264K  inchange semiconductor
 2sk2313.pdf

isc N-Channel MOSFET Transistor 2SK2313 DESCRIPTION Drain Current ID=60A@ TC=25 Drain Source Voltage- VDSS=60V(Min) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for low voltage,high speed applications, Chopper regulator,DC-DC converter and motor driv