SK2310AA - описание и поиск аналогов

N-Channel Enhancement Power Mosfet Specification Power Mosfet Specification SOT-23 Features Advanced trench cell design 3 High speed switch Applications Portable appliances Notebook/PC appliances Power Management 2 DC/DC Converter 1 Quick reference 1 Gate 2 Gate 2 Source 3 Drain BV 60 V ID=3A RDS(ON) 90 m @ VGS = 10 V RDS(ON) 11

2SK2313 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2313 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 8 m (typ.) High forward transfer admittance Yfs = 60 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement mode

2SK2314 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2314 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 66 m (typ.) High forward transfer admittance Yfs = 16 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 100 V) Enhancement mode

2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2311 Chopper Regulator, DC-DC Converter and Switching Unit mm Regulator Applications 4 V gate drive Low drain-source ON resistance R = 36 m (typ.) DS (ON) High forward transfer admittance Y = 16 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS En

2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2312 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 13 m (typ.) High forward transfer admittance Yfs = 40 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement mode

Ordering number EN5300A N-Channel Silicon MOSFET 2SK2316 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A-PCP Low-voltage drive (2.5V drive). [2SK2316] 1 Gate 2 Drain 3 Source SANYO PCP (Bottom View) Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condition

Ordering number ENN5058 N-Channel Silicon MOSFET 2SK2317 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B 2.5V drive. [2SK2317] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SK2317] 6.5 2.3 5.0 0.5 4 0.5 0.85

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isc N-Channel MOSFET Transistor 2SK2313 DESCRIPTION Drain Current ID=60A@ TC=25 Drain Source Voltage- VDSS=60V(Min) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for low voltage,high speed applications, Chopper regulator,DC-DC converter and motor driv