SWD088R06VT Todos los transistores

 

SWD088R06VT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SWD088R06VT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 132 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 77 nS

Cossⓘ - Capacitancia de salida: 207 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm

Encapsulados: TO-252

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SWD088R06VT datasheet

 ..1. Size:681K  samwin
 sw088r06vt swk088r06vt swi088r06vt swd088r06vt swha088r06vt.pdf pdf_icon

SWD088R06VT

SW088R06VT N-channel Enhanced mode SOP-8/TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 SOP-8 BVDSS 60V High ruggedness Low RDS(ON) (Typ 11m )@VGS=4.5V ID 40A 5 6 Low RDS(ON) (Typ 9.2m )@VGS=10V 7 8 RDS(ON) 11m @VGS=4.5V Low Gate Charge (Typ 48nC) 4 3 Improved dv/dt Capability 2 9.2m @VGS=10V 1 100% A

 ..2. Size:1012K  samwin
 swi088r06vt swd088r06vt swha088r06vt.pdf pdf_icon

SWD088R06VT

SW088R06VT N-channel Enhanced mode TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 BVDSS 60V High ruggedness Low RDS(ON) (Typ 11m )@VGS=4.5V ID 40A 1 8 Low RDS(ON) (Typ 9.2m )@VGS=10V 2 7 RDS(ON) 11m @VGS=4.5V Low Gate Charge (Typ 48nC) 6 3 5 4 Improved dv/dt Capability 9.2m @VGS=10V 100% Avalanche Tested 1 1 2 2 Applicati

 6.1. Size:750K  samwin
 swd088r08e8t.pdf pdf_icon

SWD088R06VT

SW088R08E8T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 80V High ruggedness ID 80A Low RDS(ON) (Typ 9.7m )@VGS=10V RDS(ON) 9.7m Low Gate Charge (Typ 86nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Descr

 9.1. Size:782K  samwin
 swd085r68e7t.pdf pdf_icon

SWD088R06VT

SW085R68E7T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 68V High ruggedness ID 70A Low RDS(ON) (Typ 10.2m )@VGS=10V RDS(ON) 10.2m Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Des

MOSTRAR MÁS

Otros transistores... SWP038R10ES , SWT038R10ES , SWH055R03VT , SWHA055R03VT , SWB075R06ET , SWP075R06ET , SWK088R06VT , SWI088R06VT , AO3407 , SWHA088R06VT , SWU10N70D , SWF10N70K , SWD10N70K , SWF12N65D , SWU12N65D , SWP12N65D , SWB12N65D .

History: SWB12N65D | 2SK1348 | SML20B56 | SSW65R090S2 | AP0103GP-HF | AOW11S60 | BS107PSTOB

 

 

 

 

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