All MOSFET. SWD088R06VT Datasheet

 

SWD088R06VT Datasheet and Replacement


   Type Designator: SWD088R06VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 132 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 207 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: TO-252
 

 SWD088R06VT substitution

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SWD088R06VT Datasheet (PDF)

 ..1. Size:681K  samwin
 sw088r06vt swk088r06vt swi088r06vt swd088r06vt swha088r06vt.pdf pdf_icon

SWD088R06VT

SW088R06VT N-channel Enhanced mode SOP-8/TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 SOP-8 BVDSS : 60V High ruggedness Low RDS(ON) (Typ 11m)@VGS=4.5V ID : 40A 5 6 Low RDS(ON) (Typ 9.2m)@VGS=10V 7 8 RDS(ON) : 11m@VGS=4.5V Low Gate Charge (Typ 48nC) 4 3 Improved dv/dt Capability 2 9.2m@VGS=10V 1 100% A

 ..2. Size:1012K  samwin
 swi088r06vt swd088r06vt swha088r06vt.pdf pdf_icon

SWD088R06VT

SW088R06VTN-channel Enhanced mode TO-251/TO-252/DFN5*6 MOSFETFeaturesTO-251TO-252 DFN5*6BVDSS : 60V High ruggedness Low RDS(ON) (Typ 11m)@VGS=4.5VID : 40A1 8Low RDS(ON) (Typ 9.2m)@VGS=10V2 7RDS(ON) : 11m@VGS=4.5V Low Gate Charge (Typ 48nC)6354 Improved dv/dt Capability 9.2m@VGS=10V 100% Avalanche Tested1 122 Applicati

 6.1. Size:750K  samwin
 swd088r08e8t.pdf pdf_icon

SWD088R06VT

SW088R08E8TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 80V High ruggednessID : 80A Low RDS(ON) (Typ 9.7m)@VGS=10VRDS(ON) : 9.7m Low Gate Charge (Typ 86nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Descr

 9.1. Size:782K  samwin
 swd085r68e7t.pdf pdf_icon

SWD088R06VT

SW085R68E7TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 68V High ruggednessID : 70A Low RDS(ON) (Typ 10.2m)@VGS=10VRDS(ON) : 10.2m Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Des

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Datasheet: SWP038R10ES , SWT038R10ES , SWH055R03VT , SWHA055R03VT , SWB075R06ET , SWP075R06ET , SWK088R06VT , SWI088R06VT , 7N60 , SWHA088R06VT , SWU10N70D , SWF10N70K , SWD10N70K , SWF12N65D , SWU12N65D , SWP12N65D , SWB12N65D .

Keywords - SWD088R06VT MOSFET datasheet

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