SWD088R06VT PDF and Equivalents Search

 

SWD088R06VT Specs and Replacement

Type Designator: SWD088R06VT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 132 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 77 nS

Cossⓘ - Output Capacitance: 207 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: TO-252

SWD088R06VT substitution

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SWD088R06VT datasheet

 ..1. Size:681K  samwin
 sw088r06vt swk088r06vt swi088r06vt swd088r06vt swha088r06vt.pdf pdf_icon

SWD088R06VT

SW088R06VT N-channel Enhanced mode SOP-8/TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 SOP-8 BVDSS 60V High ruggedness Low RDS(ON) (Typ 11m )@VGS=4.5V ID 40A 5 6 Low RDS(ON) (Typ 9.2m )@VGS=10V 7 8 RDS(ON) 11m @VGS=4.5V Low Gate Charge (Typ 48nC) 4 3 Improved dv/dt Capability 2 9.2m @VGS=10V 1 100% A... See More ⇒

 ..2. Size:1012K  samwin
 swi088r06vt swd088r06vt swha088r06vt.pdf pdf_icon

SWD088R06VT

SW088R06VT N-channel Enhanced mode TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 BVDSS 60V High ruggedness Low RDS(ON) (Typ 11m )@VGS=4.5V ID 40A 1 8 Low RDS(ON) (Typ 9.2m )@VGS=10V 2 7 RDS(ON) 11m @VGS=4.5V Low Gate Charge (Typ 48nC) 6 3 5 4 Improved dv/dt Capability 9.2m @VGS=10V 100% Avalanche Tested 1 1 2 2 Applicati... See More ⇒

 6.1. Size:750K  samwin
 swd088r08e8t.pdf pdf_icon

SWD088R06VT

SW088R08E8T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 80V High ruggedness ID 80A Low RDS(ON) (Typ 9.7m )@VGS=10V RDS(ON) 9.7m Low Gate Charge (Typ 86nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Descr... See More ⇒

 9.1. Size:782K  samwin
 swd085r68e7t.pdf pdf_icon

SWD088R06VT

SW085R68E7T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 68V High ruggedness ID 70A Low RDS(ON) (Typ 10.2m )@VGS=10V RDS(ON) 10.2m Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Des... See More ⇒

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Detailed specifications: SWP038R10ES, SWT038R10ES, SWH055R03VT, SWHA055R03VT, SWB075R06ET, SWP075R06ET, SWK088R06VT, SWI088R06VT, AO3407, SWHA088R06VT, SWU10N70D, SWF10N70K, SWD10N70K, SWF12N65D, SWU12N65D, SWP12N65D, SWB12N65D

Keywords - SWD088R06VT MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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