VN10LP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: VN10LP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.625 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.27 A

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: ELINE

Búsqueda de reemplazo de MOSFET VN10LP

VN10LP Datasheet (PDF)

..1. Size:33K diodes
vn10lp.pdf

N-CHANNEL ENHANCEMENTVN10LPMODE VERTICAL DMOS FETISSUE 2 NOVEMBER 2005FEATURES* 60 Volt VDS* RDS(on)=5D G SREFER TO ZVN3306A FOR GRAPHSE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb = 25C ID 270 mAPulsed Drain Current IDM 3AGate Source Voltage VGS 20 VPower D

9.1. Size:53K motorola
vn10lm.rev1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby VN10LM/DTMOS FET TransistorVN10LMNChannel Enhancement3 DRAIN2GATE1 SOURCE123CASE 2905, STYLE 22TO92 (TO226AE)MAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDSS 60 VdcGateSource Voltage Continuous VGS 20 Vdc Nonrepetitive (tp 50 s) VGSM 40 Vpk

9.2. Size:47K vishay
vn0610ll vn10lls.pdf

VN10LLS, VN0605T, VN0610LL, VN2222LLVishay SiliconixN-Channel 60-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A)VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.1860VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 2.5 W

9.3. Size:75K vishay
vn10lls,0605t,0610ll,2222ll.pdf

VN10LLS, VN0605T, VN0610LL, VN2222LLVishay SiliconixN-Channel Enhancement-Mode MOSFET TransistorsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A)VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18606060VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD

9.4. Size:51K vishay
vn10lls vn0605t vn0610ll vn2222ll.pdf

9.5. Size:24K diodes
vn10lf.pdf

SOT23 N-CHANNEL ENHANCEMENTVN10LFMODE VERTICAL DMOS FETISSUE 2 JANUARY 1996FEATURES* 60 Volt VDSS* RDS(on)=5DPARTMARKING DETAIL MYGABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb = 25C ID 150 mAPulsed Drain Current IDM 3AGate Source Voltage VGS 20 VPower Dissipation at Tamb = 25

9.6. Size:47K siliconix
vn0605t vn10le vn10lm vn2222lm.pdf

VN10/0605/0610/2222 SeriesN-Channel Enhancement-Mode MOSFET TransistorsVN10LE VN0605T VN2222LLVN10LM VN0610LL VN2222LMProduct SummaryPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A)VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38VN10LM 5 @ VGS = 10 V 0.8 to 2.5 0.32VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.186060VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28VN2222LL 7.5 @ VGS

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