All MOSFET. VN10LP Datasheet

 

VN10LP MOSFET. Datasheet pdf. Equivalent


   Type Designator: VN10LP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 0.625 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 0.27 A
   Drain-Source Capacitance (Cd): 60 pF
   Maximum Drain-Source On-State Resistance (Rds): 5 Ohm
   Package: ELINE

 VN10LP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VN10LP Datasheet (PDF)

 ..1. Size:33K  diodes
 vn10lp.pdf

VN10LP VN10LP

N-CHANNEL ENHANCEMENTVN10LPMODE VERTICAL DMOS FETISSUE 2 NOVEMBER 2005FEATURES* 60 Volt VDS* RDS(on)=5D G SREFER TO ZVN3306A FOR GRAPHSE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb = 25C ID 270 mAPulsed Drain Current IDM 3AGate Source Voltage VGS 20 VPower D

 9.1. Size:53K  motorola
 vn10lm.rev1.pdf

VN10LP VN10LP

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby VN10LM/DTMOS FET TransistorVN10LMN Channel Enhancement3 DRAIN2GATE1 SOURCE123CASE 29 05, STYLE 22TO 92 (TO 22

 9.2. Size:47K  vishay
 vn0610ll vn10lls.pdf

VN10LP VN10LP

VN10LLS, VN0605T, VN0610LL, VN2222LLVishay SiliconixN-Channel 60-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A)VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.1860VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 2.5 W

 9.3. Size:75K  vishay
 vn10lls,0605t,0610ll,2222ll.pdf

VN10LP VN10LP

VN10LLS, VN0605T, VN0610LL, VN2222LLVishay SiliconixN-Channel Enhancement-Mode MOSFET TransistorsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A)VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18606060VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD

 9.4. Size:51K  vishay
 vn10lls vn0605t vn0610ll vn2222ll.pdf

VN10LP VN10LP

VN10LLS, VN0605T, VN0610LL, VN2222LLVishay SiliconixN-Channel 60-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A)VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.1860VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 2.5 W

 9.5. Size:24K  diodes
 vn10lf.pdf

VN10LP

SOT23 N-CHANNEL ENHANCEMENTVN10LFMODE VERTICAL DMOS FETISSUE 2 JANUARY 1996FEATURES* 60 Volt VDSS* RDS(on)=5DPARTMARKING DETAIL MYGABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb = 25C ID 150 mAPulsed Drain Current IDM 3AGate Source Voltage VGS 20 VPower Dissipation at Tamb = 25

 9.6. Size:47K  siliconix
 vn0605t vn10le vn10lm vn2222lm.pdf

VN10LP VN10LP

VN10/0605/0610/2222 SeriesN-Channel Enhancement-Mode MOSFET TransistorsVN10LE VN0605T VN2222LLVN10LM VN0610LL VN2222LMProduct SummaryPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A)VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38VN10LM 5 @ VGS = 10 V 0.8 to 2.5 0.32VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.186060VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28VN2222LL 7.5 @ VGS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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