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SSW47N60SFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSW47N60SFD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 391 W

Tensión drenaje-fuente |Vds|: 600 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 47 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 5 V

Carga de compuerta (Qg): 64 nC

Tiempo de elevación (tr): 12 nS

Conductancia de drenaje-sustrato (Cd): 910 pF

Resistencia drenaje-fuente RDS(on): 0.075 Ohm

Empaquetado / Estuche: TO247

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SSW47N60SFD Datasheet (PDF)

..1. ssw47n60sfd ssa47n60sfd.pdf Size:1289K _cn_super_semi

SSW47N60SFD
SSW47N60SFD

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power MOSFET With Fast-Recovery SS*47N60SFD Rev. 1.5 Jun. 2019 www.supersemi.com.cn March, 2016 SJ-FET SSW47N60SFD/SSA47N60SFD 600V N-Channel MOSFET With Fast-Recovery Description Features SJ-FET is new generation of high voltage MOSFET family that Mult

5.1. ssw47n60s ssa47n60s.pdf Size:1214K _cn_super_semi

SSW47N60SFD
SSW47N60SFD

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power MOSFET SS*47N60S Rev. 1.3 Jun. 2019 www.supersemi.com.cn March, 2016 SJ-FET SSW47N60S/SSA47N60S 600V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism fo

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