ISCNH310P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ISCNH310P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 150 W
Voltaje máximo drenador - fuente |Vds|: 700 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 15 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 27 nC
Tiempo de subida (tr): 63 nS
Conductancia de drenaje-sustrato (Cd): 38 pF
Resistencia entre drenaje y fuente RDS(on): 0.26 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET ISCNH310P
ISCNH310P Datasheet (PDF)
iscnh310p.pdf
isc N-Channel MOSFET Transistor ISCNH310PFEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.26(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
iscnh320k.pdf
isc N-Channel MOSFET Transistor ISCNH320KFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 135m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONLow gate chargeFast switching speedImproved dv/dt capab
iscnh371d.pdf
isc N-Channel MOSFET Transistor ISCNH371DFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
iscnh377b.pdf
isc N-Channel MOSFET Transistor ISCNH377BFEATURESDrain Current : I = 200A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
iscnh379p.pdf
isc N-Channel MOSFET Transistor ISCNH379PFEATURESDrain Current : I = 2A@ T =25D CDrain Source Voltage: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 10(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
iscnh375w.pdf
isc N-Channel MOSFET Transistor ISCNH375WFEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 350m(Max)@V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
iscnh342p.pdf
isc N-Channel MOSFET Transistor ISCNH342PFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONLow gate chargeFast switching speedABSOLUTE MAXIMUM RATINGS(
iscnh327p.pdf
isc N-Channel MOSFET Transistor ISCNH327PFEATURESDrain Current I = 200A@ T =25D CDrain Source Voltage-: V = 85V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
iscnh340b.pdf
isc N-Channel MOSFET Transistor ISCNH340BFEATURESDrain Current : I = 135A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
iscnh345p.pdf
isc N-Channel MOSFET Transistor ISCNH345PFEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V = 1500V(Min)DSSStatic Drain-Source On-Resistance: R = 9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingSwitching regulator, DC-DC co
iscnh346f.pdf
isc N-Channel MOSFET Transistor ISCNH346FFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high efficiency switch mode power supply.ABSOLUTE
iscnh372b.pdf
isc N-Channel MOSFET Transistor ISCNH372BFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
iscnh342w.pdf
isc N-Channel MOSFET Transistor ISCNH342WFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONLow gate chargeFast switching speedABSOLUTE MAXIMUM RATINGS(
iscnh325w.pdf
isc N-Channel MOSFET Transistor ISCNH325WFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 90m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A
iscnh339d.pdf
isc N-Channel MOSFET Transistor ISCNH339DFEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB
iscnh374d.pdf
isc N-Channel MOSFET Transistor ISCNH374DFEATURESDrain Current : I = 44A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 15.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
iscnh376l.pdf
isc N-Channel MOSFET Transistor ISCNH376LFEATURESDrain Current : I = 72A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 50m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
iscnh363n.pdf
isc N-Channel MOSFET Transistor ISCNH363NFEATURESDrain Current : I = 59A@ T =25D CDrain Source Voltage: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 36m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A
iscnh373f.pdf
isc N-Channel MOSFET Transistor ISCNH373FFEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V = 1500V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingSwitching regulator, DC-DC conv
iscnh370w.pdf
isc N-Channel MOSFET Transistor ISCNH370WFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 95m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A
iscnh328w.pdf
isc N-Channel MOSFET Transistor ISCNH328WFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A
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