ISCNH310P
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: ISCNH310P
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 150
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 15
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 63
ns
Cossⓘ - Выходная емкость: 38
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.26
Ohm
Тип корпуса:
TO220
- подбор MOSFET транзистора по параметрам
ISCNH310P
Datasheet (PDF)
..1. Size:269K inchange semiconductor
iscnh310p.pdf 
isc N-Channel MOSFET Transistor ISCNH310PFEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.26(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
8.1. Size:255K inchange semiconductor
iscnh320k.pdf 
isc N-Channel MOSFET Transistor ISCNH320KFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 135m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONLow gate chargeFast switching speedImproved dv/dt capab
8.2. Size:286K inchange semiconductor
iscnh371d.pdf 
isc N-Channel MOSFET Transistor ISCNH371DFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
8.3. Size:356K inchange semiconductor
iscnh377b.pdf 
isc N-Channel MOSFET Transistor ISCNH377BFEATURESDrain Current : I = 200A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
8.4. Size:288K inchange semiconductor
iscnh379p.pdf 
isc N-Channel MOSFET Transistor ISCNH379PFEATURESDrain Current : I = 2A@ T =25D CDrain Source Voltage: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 10(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.5. Size:580K inchange semiconductor
iscnh375w.pdf 
isc N-Channel MOSFET Transistor ISCNH375WFEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 350m(Max)@V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
8.6. Size:260K inchange semiconductor
iscnh342p.pdf 
isc N-Channel MOSFET Transistor ISCNH342PFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONLow gate chargeFast switching speedABSOLUTE MAXIMUM RATINGS(
8.7. Size:261K inchange semiconductor
iscnh327p.pdf 
isc N-Channel MOSFET Transistor ISCNH327PFEATURESDrain Current I = 200A@ T =25D CDrain Source Voltage-: V = 85V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
8.8. Size:329K inchange semiconductor
iscnh340b.pdf 
isc N-Channel MOSFET Transistor ISCNH340BFEATURESDrain Current : I = 135A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
8.9. Size:246K inchange semiconductor
iscnh345p.pdf 
isc N-Channel MOSFET Transistor ISCNH345PFEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V = 1500V(Min)DSSStatic Drain-Source On-Resistance: R = 9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingSwitching regulator, DC-DC co
8.10. Size:251K inchange semiconductor
iscnh346f.pdf 
isc N-Channel MOSFET Transistor ISCNH346FFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high efficiency switch mode power supply.ABSOLUTE
8.11. Size:356K inchange semiconductor
iscnh372b.pdf 
isc N-Channel MOSFET Transistor ISCNH372BFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
8.12. Size:302K inchange semiconductor
iscnh342w.pdf 
isc N-Channel MOSFET Transistor ISCNH342WFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONLow gate chargeFast switching speedABSOLUTE MAXIMUM RATINGS(
8.13. Size:304K inchange semiconductor
iscnh325w.pdf 
isc N-Channel MOSFET Transistor ISCNH325WFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 90m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A
8.14. Size:307K inchange semiconductor
iscnh339d.pdf 
isc N-Channel MOSFET Transistor ISCNH339DFEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB
8.15. Size:286K inchange semiconductor
iscnh374d.pdf 
isc N-Channel MOSFET Transistor ISCNH374DFEATURESDrain Current : I = 44A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 15.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
8.16. Size:283K inchange semiconductor
iscnh376l.pdf 
isc N-Channel MOSFET Transistor ISCNH376LFEATURESDrain Current : I = 72A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 50m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
8.17. Size:272K inchange semiconductor
iscnh363n.pdf 
isc N-Channel MOSFET Transistor ISCNH363NFEATURESDrain Current : I = 59A@ T =25D CDrain Source Voltage: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 36m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A
8.18. Size:261K inchange semiconductor
iscnh373f.pdf 
isc N-Channel MOSFET Transistor ISCNH373FFEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V = 1500V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingSwitching regulator, DC-DC conv
8.19. Size:304K inchange semiconductor
iscnh370w.pdf 
isc N-Channel MOSFET Transistor ISCNH370WFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 95m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A
8.20. Size:304K inchange semiconductor
iscnh328w.pdf 
isc N-Channel MOSFET Transistor ISCNH328WFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A
Другие MOSFET... WPB4002
, FDM15-06KC5
, FQD2N60CTM
, FDM47-06KC5
, FDPF045N10A
, FMD15-06KC5
, FDMS8672S
, FMD21-05QC
, AON7408
, FDMS86368F085
, FMD47-06KC5
, FDBL86361F085
, FMK75-01F
, FMM110-015X2F
, FMM150-0075X2F
, FMM22-05PF
, FMM22-06PF
.
History: RU20N65P
