ISCNH325W Todos los transistores

 

ISCNH325W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ISCNH325W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: TO247

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ISCNH325W Datasheet (PDF)

 ..1. Size:304K  inchange semiconductor
iscnh325w.pdf

ISCNH325W
ISCNH325W

isc N-Channel MOSFET Transistor ISCNH325WFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 90m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A

 7.1. Size:255K  inchange semiconductor
iscnh320k.pdf

ISCNH325W
ISCNH325W

isc N-Channel MOSFET Transistor ISCNH320KFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 135m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONLow gate chargeFast switching speedImproved dv/dt capab

 7.2. Size:261K  inchange semiconductor
iscnh327p.pdf

ISCNH325W
ISCNH325W

isc N-Channel MOSFET Transistor ISCNH327PFEATURESDrain Current I = 200A@ T =25D CDrain Source Voltage-: V = 85V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 7.3. Size:304K  inchange semiconductor
iscnh328w.pdf

ISCNH325W
ISCNH325W

isc N-Channel MOSFET Transistor ISCNH328WFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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