ISCNH325W MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ISCNH325W datasheet

..1. Size:304K inchange semiconductor
iscnh325w.pdf pdf_icon

isc N-Channel MOSFET Transistor ISCNH325W FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 90m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A

7.1. Size:255K inchange semiconductor
iscnh320k.pdf pdf_icon

isc N-Channel MOSFET Transistor ISCNH320K FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 135m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Low gate charge Fast switching speed Improved dv/dt capab

7.2. Size:261K inchange semiconductor
iscnh327p.pdf pdf_icon

isc N-Channel MOSFET Transistor ISCNH327P FEATURES Drain Current I = 200A@ T =25 D C Drain Source Voltage- V = 85V(Min) DSS Static Drain-Source On-Resistance R = 6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

7.3. Size:304K inchange semiconductor
iscnh328w.pdf pdf_icon

isc N-Channel MOSFET Transistor ISCNH328W FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A

Otros transistores... CIM6N120-247 , P7515BDB , PM5G8EA , PR804BA33 , QM0005D , QN4103M6N , ISCNH310P , ISCNH320K , AO3407 , ISCNH327P , ISCNH328W , ISCNH339D , ISCNH340B , ISCNH342P , ISCNH342W , ISCNH345P , ISCNH346F .