ISCNL343D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ISCNL343D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 130 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 30 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.6 V
Resistencia entre drenaje y fuente RDS(on): 0.038 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET ISCNL343D
ISCNL343D Datasheet (PDF)
iscnl343d.pdf
isc N-Channel MOSFET Transistor ISCNL343DFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONSwitch Mode Power Supply (SMPS)Uninterruptible Power Supply (U
iscnl344d.pdf
isc N-Channel MOSFET Transistor ISCNL344DFEATURESDrain Current : I = 35A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDC/DC ConverterIdeal for high-frequency switchingand synchro
iscnl256n.pdf
isc N-Channel MOSFET Transistor ISCNL256NDESCRIPTIONDrain Current I =60A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch Mode Power Supply (SMPS)Uninterruptible Power Supply (UPS)ABSOLUTE MAXIMUM RATINGS(T =25
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
