WTM2301 Todos los transistores

 

WTM2301 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WTM2301
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 72 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.078 Ohm
   Paquete / Cubierta: SOT23
 

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WTM2301 Datasheet (PDF)

 ..1. Size:718K  wpmtek
 wtm2301.pdf pdf_icon

WTM2301

WTM2301P-Channel Enhancement Mode Power MOSFET Description The WTM2301 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = -20V, lD = -3AR

 8.1. Size:762K  wpmtek
 wtm2302.pdf pdf_icon

WTM2301

WTM2302N-Channel Enhancement Mode Power MOSFETDescription The WTM2302 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = 20V, lD = 2.6AR

 8.2. Size:730K  wpmtek
 wtm2300.pdf pdf_icon

WTM2301

WTM2300N-Channel Enhancement Mode Power MOSFETDescription The WTM2300 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = 20V, lD = 6AR

 8.3. Size:782K  wpmtek
 wtm2306.pdf pdf_icon

WTM2301

WTM2306N-Channel Enhancement Mode Power MOSFETDescription The WTM2306 uses advanced trench technology to provideexcellent R , This device is suitable for use as aDS(ON)battery protection or in other switching application.Features V DS = 30V, lD = 3.6AR

MOSTRAR MÁS

Otros transistores... WFD2N65L , WFD7N65L , WFF2N65L , WFF5N65L , WFF8N65L , WFJ5N65B , WFU2N65L , WTM2300 , IRFB4227 , WTM2302 , WTM2305 , WTM2306 , WTM3400 , WTM3401 , WTM3415 , TX15N10B , TX40N06B .

History: SSM60T03GH | STL11N3LLH6 | STP2N95K5 | WMK028N10HGS | SIR876ADP | SI4435DY | HB3710P

 

 
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