WTM2301 MOSFET. Datasheet pdf. Equivalent
Type Designator: WTM2301
Marking Code: A1SHB
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.3 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 72 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
Package: SOT23
WTM2301 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WTM2301 Datasheet (PDF)
wtm2301.pdf
WTM2301P-Channel Enhancement Mode Power MOSFET Description The WTM2301 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = -20V, lD = -3AR
wtm2302.pdf
WTM2302N-Channel Enhancement Mode Power MOSFETDescription The WTM2302 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = 20V, lD = 2.6AR
wtm2300.pdf
WTM2300N-Channel Enhancement Mode Power MOSFETDescription The WTM2300 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = 20V, lD = 6AR
wtm2306.pdf
WTM2306N-Channel Enhancement Mode Power MOSFETDescription The WTM2306 uses advanced trench technology to provideexcellent R , This device is suitable for use as aDS(ON)battery protection or in other switching application.Features V DS = 30V, lD = 3.6AR
wtm2305.pdf
WTM2305P-Channel Enhancement Mode Power MOSFET Description The WTM2305 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = -20V, lD = -4.1AR
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
