ZVNL110A Todos los transistores

 

ZVNL110A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZVNL110A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.32 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 75 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm

Encapsulados: ELINE

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ZVNL110A datasheet

 ..1. Size:27K  diodes
 zvnl110a.pdf pdf_icon

ZVNL110A

N-CHANNEL ENHANCEMENT ZVNL110A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=3 * Low threshold voltage D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25 C ID 320 mA Pulsed Drain Current IDM 6A Gate Source Voltage VGS 20 V Power Dissipati

 0.1. Size:20K  diodes
 zvnl110astoa zvnl110astob zvnl110astz.pdf pdf_icon

ZVNL110A

N-CHANNEL ENHANCEMENT ZVNL110A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=3 * Low threshold voltage D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25 C ID 320 mA Pulsed Drain Current IDM 6A Gate Source Voltage VGS 20 V Power Dissipati

 7.1. Size:20K  diodes
 zvnl110gta zvnl110gtc.pdf pdf_icon

ZVNL110A

SOT223 N-CHANNEL ENHANCEMENT MODE ZVNL110G LOW THRESHOLD VERTICAL DMOS FET ISSUE 2 - FEBRUARY 1996 FEATURES D * LOW RDS(ON) - 3 PARTMARKING DETAIL - ZVNL110 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25 C ID 600 mA Pulsed Drain Current IDM 6A Gate-Source Voltage VGS 20 V Power Dissipation a

 7.2. Size:25K  diodes
 zvnl110g.pdf pdf_icon

ZVNL110A

SOT223 N-CHANNEL ENHANCEMENT MODE ZVNL110G LOW THRESHOLD VERTICAL DMOS FET ISSUE 2 - FEBRUARY 1996 FEATURES D * LOW RDS(ON) - 3 PARTMARKING DETAIL - ZVNL110 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25 C ID 600 mA Pulsed Drain Current IDM 6A Gate-Source Voltage VGS 20 V Power Dissipation a

MOSTRAR MÁS

Otros transistores... ZVN4306A , ZVN4306AV , ZVN4306G , ZVN4306GV , ZVN4310A , ZVN4310G , ZVN4424A , ZVN4424G , AO4407 , ZVNL110G , ZVNL120A , ZVNL535A , ZVP0120A , ZVP0535A , ZVP0540A , ZVP0545A , ZVP0545G .

 

 

 


 
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