All MOSFET. ZVNL110A Datasheet

 

ZVNL110A Datasheet and Replacement


   Type Designator: ZVNL110A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.32 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: ELINE
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ZVNL110A Datasheet (PDF)

 ..1. Size:27K  diodes
 zvnl110a.pdf pdf_icon

ZVNL110A

N-CHANNEL ENHANCEMENTZVNL110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)=3* Low threshold voltageD G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 VContinuous Drain Current at Tamb=25C ID 320 mAPulsed Drain Current IDM 6AGate Source Voltage VGS 20 VPower Dissipati

 0.1. Size:20K  diodes
 zvnl110astoa zvnl110astob zvnl110astz.pdf pdf_icon

ZVNL110A

N-CHANNEL ENHANCEMENTZVNL110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)=3* Low threshold voltageD G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 VContinuous Drain Current at Tamb=25C ID 320 mAPulsed Drain Current IDM 6AGate Source Voltage VGS 20 VPower Dissipati

 7.1. Size:20K  diodes
 zvnl110gta zvnl110gtc.pdf pdf_icon

ZVNL110A

SOT223 N-CHANNEL ENHANCEMENT MODEZVNL110GLOW THRESHOLD VERTICAL DMOS FETISSUE 2 - FEBRUARY 1996 FEATURESD* LOW RDS(ON) - 3PARTMARKING DETAIL - ZVNL110SDGABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 VContinuous Drain Current at Tamb=25C ID 600 mAPulsed Drain Current IDM 6AGate-Source Voltage VGS 20 VPower Dissipation a

 7.2. Size:25K  diodes
 zvnl110g.pdf pdf_icon

ZVNL110A

SOT223 N-CHANNEL ENHANCEMENT MODEZVNL110GLOW THRESHOLD VERTICAL DMOS FETISSUE 2 - FEBRUARY 1996 FEATURESD* LOW RDS(ON) - 3PARTMARKING DETAIL - ZVNL110SDGABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 VContinuous Drain Current at Tamb=25C ID 600 mAPulsed Drain Current IDM 6AGate-Source Voltage VGS 20 VPower Dissipation a

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Keywords - ZVNL110A MOSFET datasheet

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