2SK2827-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2827-01
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 60 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 35 V
Corriente continua de drenaje |Id|: 9 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Tiempo de subida (tr): 70 nS
Conductancia de drenaje-sustrato (Cd): 150 pF
Resistencia entre drenaje y fuente RDS(on): 1.2 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET 2SK2827-01
2SK2827-01 Datasheet (PDF)
2sk2827-01.pdf
FUJI POWER MOSFET2SK2827-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(
2sk2827.pdf
isc N-Channel MOSFET Transistor 2SK2827FEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk2828.pdf
2SK2828Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-514 C (Z)4th. EditionFeb 1999Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DCDC converter Avalanche ratingsOutlineTO3PD21G1. Gate2. Drain12 (Flange)333. SourceS2SK2828Abs
2sk2826.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2826SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK2826 is N-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK2826 TO-220AB2SK2826-S TO-262FEATURES2SK2826-ZJ TO-263 Super Low On-state ResistanceNote2SK2826-Z TO-220SMDRDS(on)
2sk2823.pdf
2SK2823 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2823 For Portable Equipment Unit: mm High Speed Switch Applications Analog Switch Applications High input impedance 1.5 V gate drive Low gate threshold voltage: V = 0.5~1.0 V th Small package Marking Equivalent CircuitJEDEC TO-236MODMaximum Ratings (Ta == 25C) ==JEITA SC-5
2sk2824.pdf
2SK2824 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2824 For Portable Equipment Unit: mm High Speed Switch Applications Analog Switch Applications High input impedance 1.5 V gate drive Low gate threshold voltage: V = 0.5~1.0 V th Small package Marking Equivalent CircuitJEDEC Maximum Ratings (Ta == 25C) ==JEITA SC-70TO
2sk2825.pdf
2SK2825 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2825 For Portable Equipment Unit: mm High Speed Switch Applications Analog Switch Applications High input impedance 1.5 V gate drive Low gate threshold voltage: V = 0.5~1.0 V th Small package Marking Equivalent CircuitMaximum Ratings (Ta == 25C) ==JEDEC JEITA Cha
2sk2821.pdf
isc N-Channel MOSFET Transistor 2SK2821FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max) @V =4VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr
2sk2826.pdf
isc N-Channel MOSFET Transistor 2SK2826FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk2820.pdf
isc N-Channel MOSFET Transistor 2SK2820FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max) @V =4VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr
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