2SK2827-01 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2827-01
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220AB
2SK2827-01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2827-01 Datasheet (PDF)
2sk2827-01.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
FUJI POWER MOSFET2SK2827-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(
2sk2827.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc N-Channel MOSFET Transistor 2SK2827FEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk2828.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SK2828Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-514 C (Z)4th. EditionFeb 1999Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DCDC converter Avalanche ratingsOutlineTO3PD21G1. Gate2. Drain12 (Flange)333. SourceS2SK2828Abs
2sk2826.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2826SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK2826 is N-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK2826 TO-220AB2SK2826-S TO-262FEATURES2SK2826-ZJ TO-263 Super Low On-state ResistanceNote2SK2826-Z TO-220SMDRDS(on)
2sk2823.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SK2823 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2823 For Portable Equipment Unit: mm High Speed Switch Applications Analog Switch Applications High input impedance 1.5 V gate drive Low gate threshold voltage: V = 0.5~1.0 V th Small package Marking Equivalent CircuitJEDEC TO-236MODMaximum Ratings (Ta == 25C) ==JEITA SC-5
2sk2824.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SK2824 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2824 For Portable Equipment Unit: mm High Speed Switch Applications Analog Switch Applications High input impedance 1.5 V gate drive Low gate threshold voltage: V = 0.5~1.0 V th Small package Marking Equivalent CircuitJEDEC Maximum Ratings (Ta == 25C) ==JEITA SC-70TO
2sk2825.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SK2825 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2825 For Portable Equipment Unit: mm High Speed Switch Applications Analog Switch Applications High input impedance 1.5 V gate drive Low gate threshold voltage: V = 0.5~1.0 V th Small package Marking Equivalent CircuitMaximum Ratings (Ta == 25C) ==JEDEC JEITA Cha
2sk2821.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc N-Channel MOSFET Transistor 2SK2821FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max) @V =4VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr
2sk2826.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc N-Channel MOSFET Transistor 2SK2826FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk2820.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc N-Channel MOSFET Transistor 2SK2820FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max) @V =4VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .