2SK2883B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2883B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.6 Ohm

Encapsulados: TO263

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2SK2883B datasheet

 ..1. Size:357K  inchange semiconductor
2sk2883b.pdf pdf_icon

2SK2883B

isc N-Channel MOSFET Transistor 2SK2883B FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 3.6 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 7.1. Size:430K  toshiba
2sk2883.pdf pdf_icon

2SK2883B

2SK2883 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2883 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 3.0 (typ.) High forward transfer admittance Y = 2.6 S (typ.) fs Low leakage current I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode Vth = 2.0 4

 7.2. Size:283K  inchange semiconductor
2sk2883k.pdf pdf_icon

2SK2883B

isc N-Channel MOSFET Transistor 2SK2883K FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 3.6 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.1. Size:417K  toshiba
2sk2889.pdf pdf_icon

2SK2883B

2SK2889 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2889 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.54 (typ.) High forward transfer admittance Y = 9.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DSS Enhancement-mode Vth = 2.0 4.0 V

Otros transistores... 2SK2870L, 2SK2870S, 2SK2871-01, 2SK2873-01, 2SK2874-01L, 2SK2874-01S, 2SK2875-01, 2SK2877-01, IRF9540, 2SK2883K, 2SK2884B, 2SK2884K, 2SK2889B, 2SK2889K, 2SK2890-01, 2SK3026, 2SK3027