2SK2883B MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2883B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm
Package: TO263
2SK2883B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2883B Datasheet (PDF)
2sk2883b.pdf
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isc N-Channel MOSFET Transistor 2SK2883BFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 3.6(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk2883.pdf
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2SK2883 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2883 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.0 (typ.) High forward transfer admittance : |Y | = 2.6 S (typ.) fs Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4
2sk2883k.pdf
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isc N-Channel MOSFET Transistor 2SK2883KFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 3.6(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk2889.pdf
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2SK2889 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2889 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.54 (typ.) High forward transfer admittance : |Y | = 9.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DSS Enhancement-mode : Vth = 2.0~4.0 V
2sk2886.pdf
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2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2886 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 14 m (typ.) (ON) High forward transfer admittance : |Y | = 31 S (typ.) fs Low leakage current : I = 100 A (max) (V = 50 V) DSS DS Enhancement-mode : Vth = 0.8~2.0 V (V
2sk2884.pdf
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2SK2884 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2884 Chopper Regulator, DC-DC Converter Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.9 (typ.) High forward transfer admittance : |Y | = 3.8 S (typ.) fs Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I =
2sk2887.pdf
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TransistorsSwitching (200V, 3A)2SK2887FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications16
2sk2885l-s.pdf
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2SK2885(L), 2SK2885(S)Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-545 A2nd. EditionFeatures Low on-resistanceRDS(on) = 10m typ. 4V gate drive devices. High speed switchingOutlineLDPAK4 4D123123G 1. Gate2. Drain3. Source4. DrainS2SK2885(L), 2SK2885(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDr
2sk2885.pdf
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2SK2885(L), 2SK2885(S)Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-545 A2nd. EditionFeatures Low on-resistanceRDS(on) = 10m typ. 4V gate drive devices. High speed switchingOutlineLDPAK4 4D123123G 1. Gate2. Drain3. Source4. DrainS2SK2885(L), 2SK2885(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDr
2sk2880.pdf
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ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sk2881.pdf
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ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is alw
2sk2885l.pdf
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isc N-Channel MOSFET Transistor 2SK2885LFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk2889b.pdf
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isc N-Channel MOSFET Transistor 2SK2889BFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk2887.pdf
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isc N-Channel MOSFET Transistor 2SK2887FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk2886.pdf
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isc N-Channel MOSFET Transistor 2SK2886DESCRIPTIONDrain Current I = 45A@ T =25D CDrain Source Voltage-: V = 50V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL VALU
2sk2884b.pdf
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isc N-Channel MOSFET Transistor 2SK2884BFEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk2885s.pdf
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isc N-Channel MOSFET Transistor 2SK2885SFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk2889k.pdf
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isc N-Channel MOSFET Transistor 2SK2889KFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk2884k.pdf
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isc N-Channel MOSFET Transistor 2SK2884KFEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk2882.pdf
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isc N-Channel MOSFET Transistor 2SK2882FEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 0.12(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .