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 ..1. Size:3376K  cn tuofeng
 3482.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD N-Channel Enhancement Mode Power MOSFET 3482 N-Channel Enhancement Mode Power MOSFET Description PDFN3X3-8L The 3482 uses advanced trench technology and 1 8 design to provide excellent RDS(ON) with low gate charge. It 2 7 can be used in a wide variety of applications. 3 6 4 5 General Features Equivalent Cir cuit VD

 0.1. Size:40K  sanyo
 2sc3482.pdf

 0.2. Size:165K  nec
 2sk3482.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3482 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3482 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3482 TO-251 (MP-3) 2SK3482-Z TO-252 (MP-3Z) FEATURES Low on-state resistance RDS(on)1 = 33 m MAX. (VGS = 10 V, ID = 18 A) RDS(

 0.3. Size:795K  techcode semi
 tdm3482.pdf

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3482 DESCRIPTION The TDM3482 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON)

 0.4. Size:199K  inchange semiconductor
 2sc3482.pdf

isc Silicon NPN Power Transistor 2SC3482 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25

 0.5. Size:288K  inchange semiconductor
 2sk3482-z.pdf

isc N-Channel MOSFET Transistor 2SK3482-Z FEATURES Drain Current I = 36A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 33m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 0.6. Size:355K  inchange semiconductor
 2sk3482.pdf

isc N-Channel MOSFET Transistor 2SK3482 FEATURES Drain Current I = 36A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 33m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi