3482 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 3482
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: PDFN3X3-8L

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3482 Datasheet (PDF)

..1. Size:3376K cn tuofeng
3482.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDN-Channel Enhancement Mode Power MOSFET 3482N-Channel Enhancement Mode Power MOSFET Description PDFN3X3-8LThe 3482 uses advanced trench technology and 18design to provide excellent RDS(ON) with low gate charge. It 27can be used in a wide variety of applications. 364 5General Features Equivalent Cir cuit VD

0.1. Size:40K sanyo
2sc3482.pdf

0.2. Size:165K nec
2sk3482.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3482SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3482 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3482 TO-251 (MP-3)2SK3482-Z TO-252 (MP-3Z)FEATURES Low on-state resistance RDS(on)1 = 33 m MAX. (VGS = 10 V, ID = 18 A) RDS(

0.3. Size:795K techcode semi
tdm3482.pdf

DATASHEETTechcodeN-Channel Enhancement Mode MOSFET TDM3482DESCRIPTIONTheTDM3482usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)

0.4. Size:199K inchange semiconductor
2sc3482.pdf

isc Silicon NPN Power Transistor 2SC3482DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

0.5. Size:288K inchange semiconductor
2sk3482-z.pdf

isc N-Channel MOSFET Transistor 2SK3482-ZFEATURESDrain Current : I = 36A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 33m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

0.6. Size:355K inchange semiconductor
2sk3482.pdf

isc N-Channel MOSFET Transistor 2SK3482FEATURESDrain Current : I = 36A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 33m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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