3482 Datasheet and Replacement

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDN-Channel Enhancement Mode Power MOSFET 3482N-Channel Enhancement Mode Power MOSFET Description PDFN3X3-8LThe 3482 uses advanced trench technology and 18design to provide excellent RDS(ON) with low gate charge. It 27can be used in a wide variety of applications. 364 5General Features Equivalent Cir cuit VD

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3482SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3482 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3482 TO-251 (MP-3)2SK3482-Z TO-252 (MP-3Z)FEATURES Low on-state resistance RDS(on)1 = 33 m MAX. (VGS = 10 V, ID = 18 A) RDS(

DATASHEETTechcodeN-Channel Enhancement Mode MOSFET TDM3482DESCRIPTIONTheTDM3482usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)

isc Silicon NPN Power Transistor 2SC3482DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc N-Channel MOSFET Transistor 2SK3482-ZFEATURESDrain Current : I = 36A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 33m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

isc N-Channel MOSFET Transistor 2SK3482FEATURESDrain Current : I = 36A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 33m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi