3482 Specs and Replacement
Type Designator: 3482
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 280 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: PDFN3X3-8L
3482 substitution
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3482 datasheet
3482.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD N-Channel Enhancement Mode Power MOSFET 3482 N-Channel Enhancement Mode Power MOSFET Description PDFN3X3-8L The 3482 uses advanced trench technology and 1 8 design to provide excellent RDS(ON) with low gate charge. It 2 7 can be used in a wide variety of applications. 3 6 4 5 General Features Equivalent Cir cuit VD... See More ⇒
2sk3482.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3482 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3482 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3482 TO-251 (MP-3) 2SK3482-Z TO-252 (MP-3Z) FEATURES Low on-state resistance RDS(on)1 = 33 m MAX. (VGS = 10 V, ID = 18 A) RDS(... See More ⇒
tdm3482.pdf
DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3482 DESCRIPTION The TDM3482 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) ... See More ⇒
Detailed specifications: 2SK3090K, 2SK3093LS, 2SK3095LS, 2SK3099LS, IPB051N08N, NDD04N60Z-1G, 15N10, 15N10B, IRF520, 4420, 4803A, 6435, 6764, 7240, 7409, 7409B, 7410
Keywords - 3482 MOSFET specs
3482 cross reference
3482 equivalent finder
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IXFA34N65X2 | MME60R290QRH
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