4803A Todos los transistores

 ..1. Size:3445K  cn tuofeng
 4803a.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4803A P-Channel Enhancement Mode Power MOSFET SOP-8 Description The 4803A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Equivalent Cir cuit

 0.1. Size:608K  aosemi
 ao4803a.pdf

AO4803A 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO4803A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -5A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

 0.2. Size:2058K  kexin
 ao4803a.pdf

SMD Type MOSFET Dual P-Channel MOSFET AO4803A (KO4803A) SOP-8 Unit mm Features VDS (V) = -30V 1.50 0.15 ID = -5 A (VGS = -10V) RDS(ON) 46m (VGS = -10V) RDS(ON) 74m (VGS = -4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D D D D G1 G2 G1 G2 S1 S2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Vo

 0.3. Size:1071K  elm
 elm34803aa-n.pdf

Dual P-channel MOSFET ELM34803AA-N General description Features ELM34803AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

 0.4. Size:1111K  elm
 elm14803ab.pdf

Dual P-channel MOSFET ELM14803AB-N General description Features ELM14803AB-N uses advanced trench technology to Vds=-30V provide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on)

 0.5. Size:595K  cn sps
 sm4803aprl.pdf

SM4803APRL -30V /-5A Dual 2P Power MOSFET C C03C C -30V /-5A Dual 2P Power MOSFET 5C03C General Description -30 V V DS -30V /-5A Dual 2P Power MOSFET 51.8 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 81.4 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant -5 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested 100% Rg Tested