All MOSFET. 4803A Datasheet

 

4803A MOSFET. Datasheet pdf. Equivalent


   Type Designator: 4803A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14.7 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: SOP8

 4803A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

4803A Datasheet (PDF)

 ..1. Size:3445K  cn tuofeng
4803a.pdf

4803A 4803A

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOP-8 Plastic-Encapsulate MOSFETS 4803AP-Channel Enhancement Mode Power MOSFET SOP-8Description The 4803A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Equivalent Cir cuit

 0.1. Size:608K  aosemi
ao4803a.pdf

4803A 4803A

AO4803A30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4803A uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -5Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

 0.2. Size:2058K  kexin
ao4803a.pdf

4803A 4803A

SMD Type MOSFETDual P-Channel MOSFETAO4803A (KO4803A)SOP-8 Unit:mm Features VDS (V) = -30V1.50 0.15 ID = -5 A (VGS = -10V) RDS(ON) 46m (VGS = -10V) RDS(ON) 74m (VGS = -4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D DD DG1 G2G1 G2S1 S2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Vo

 0.3. Size:1071K  elm
elm34803aa-n.pdf

4803A 4803A

Dual P-channel MOSFETELM34803AA-NGeneral description Features ELM34803AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

 0.4. Size:1111K  elm
elm14803ab.pdf

4803A 4803A

Dual P-channel MOSFETELM14803AB-NGeneral description Features ELM14803AB-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on)

 0.5. Size:595K  cn sps
sm4803aprl.pdf

4803A 4803A

SM4803APRL-30V /-5A Dual 2P Power MOSFET C C03C C -30V /-5A Dual 2P Power MOSFET 5C03CGeneral Description -30 VV DS-30V /-5A Dual 2P Power MOSFET 51.8 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 81.4 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant -5 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg Tested

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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