4803A Specs and Replacement
Type Designator: 4803A
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: SOP8
4803A substitution
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4803A datasheet
4803a.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4803A P-Channel Enhancement Mode Power MOSFET SOP-8 Description The 4803A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Equivalent Cir cuit ... See More ⇒
ao4803a.pdf
AO4803A 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO4803A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -5A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V) ... See More ⇒
ao4803a.pdf
SMD Type MOSFET Dual P-Channel MOSFET AO4803A (KO4803A) SOP-8 Unit mm Features VDS (V) = -30V 1.50 0.15 ID = -5 A (VGS = -10V) RDS(ON) 46m (VGS = -10V) RDS(ON) 74m (VGS = -4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D D D D G1 G2 G1 G2 S1 S2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Vo... See More ⇒
elm34803aa-n.pdf
Dual P-channel MOSFET ELM34803AA-N General description Features ELM34803AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on) ... See More ⇒
Detailed specifications: 2SK3095LS, 2SK3099LS, IPB051N08N, NDD04N60Z-1G, 15N10, 15N10B, 3482, 4420, STF13NM60N, 6435, 6764, 7240, 7409, 7409B, 7410, 7430, 7506
Keywords - 4803A MOSFET specs
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