90N03L Todos los transistores

 ..1. Size:4033K  cn tuofeng
 90n03l.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD N -CHANNEL ENHANCEMENT MODE POWER MOSFET 90N03L TO-251 Power-Transistor Product Summary V 30 V DS S D R 6.0 m DS(on),max G Equivalent Circuit I 90 A D D Features N-channel - Enhancement mode G Automotive AEC Q101 qualified S MSL1 up to 260 C peak reflow MARKING 175 C operating temperature Green

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 ipd090n03lg ipf090n03lg ips090n03lg ipu090n03lg.pdf

Type IPD090N03L G IPF090N03L G IPS090N03L G IPU090N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 9 m DS(on),max Optimized technology for DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low

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 std90n03l std90n03l-1.pdf

STD90N03L STD90N03L-1 N-channel 30V - 0.005 - 80A - DPAK/IPAK STripFET III Power MOSFET General features Type VDSS RDS(on) ID STD90N03L 30V 0.0057 80A (1) STD90N03L-1 30V 0.0057 80A (1) 3 3 2 1 1. Pulse width limited by safe operating area 1 RDS(on)*Qg industry s benchmark Conduction losses reduced IPAK DPAK Switching losses reduced Low threshold

 0.3. Size:521K  infineon
 bsc090n03lsg.pdf

BSC090N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 9 mW Optimized technology for DC/DC converters ID 48 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio

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 ips090n03l.pdf

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 ipd090n03lg6.pdf

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 ipd090n03lge8177.pdf

Type IPD090N03L G E8177 OptiMOS 3 Power-Transistor Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 9 mW Optimized technology for DC/DC converters ID 40 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Aval

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 ipd090n03lg .pdf

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 bsc090n03ls.pdf

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 0.9. Size:712K  infineon
 ipd090n03l.pdf

Type IPD090N03L G E8177 OptiMOS 3 Power-Transistor Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 9 mW Optimized technology for DC/DC converters ID 40 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Aval

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 ipd090n03lg9.pdf

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 0.11. Size:242K  inchange semiconductor
 ipd090n03l.pdf

isc N-Channel MOSFET Transistor IPD090N03L, IIPD090N03L FEATURES Static drain-source on-resistance RDS(on) 9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V Ga