SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDN -CHANNEL ENHANCEMENT MODE POWER MOSFET90N03LTO-251 Power-TransistorProduct SummaryV 30 VDSSDR 6.0mDS(on),max GEquivalent CircuitI 90 ADDFeatures N-channel - Enhancement modeG Automotive AEC Q101 qualifiedS MSL1 up to 260C peak reflowMARKING 175C operating temperature Green

Type IPD090N03L G IPF090N03L GIPS090N03L G IPU090N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 9mDS(on),max Optimized technology for DC/DC convertersI 40 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low

STD90N03LSTD90N03L-1N-channel 30V - 0.005 - 80A - DPAK/IPAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD90N03L 30V 0.0057 80A (1)STD90N03L-1 30V 0.0057 80A (1)332 11. Pulse width limited by safe operating area1 RDS(on)*Qg industrys benchmark Conduction losses reducedIPAKDPAK Switching losses reduced Low threshold

BSC090N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 9 mW Optimized technology for DC/DC convertersID 48 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

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TypeIPD090N03L G E8177 OptiMOS3 Power-TransistorProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 9 mW Optimized technology for DC/DC convertersID 40 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Aval

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TypeIPD090N03L G E8177 OptiMOS3 Power-TransistorProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 9 mW Optimized technology for DC/DC convertersID 40 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Aval

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isc N-Channel MOSFET Transistor IPD090N03L, IIPD090N03LFEATURESStatic drain-source on-resistance:RDS(on)9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV Ga