SSM3J351R Todos los transistores

 ..1. Size:228K  toshiba
 ssm3j351r.pdf

SSM3J351R MOSFETs Silicon P-Channel MOS (U-MOS ) SSM3J351R SSM3J351R SSM3J351R SSM3J351R 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 4 V drive (2) Low drain-source on-resistance RDS(ON) = 107 m (typ.) (VGS = -10 V) RDS(ON) = 122 m (typ.) (VGS = -4.5 V) RDS(ON) = 1

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 ssm3j358r.pdf

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 ssm3j356r.pdf

SSM3J356R MOSFETs Silicon P-Channel MOS (U-MOS ) SSM3J356R SSM3J356R SSM3J356R SSM3J356R 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 4 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 400 m (max) (@VGS = -4.0 V) RDS(ON) = 300 m (max) (@VGS = -10 V)

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 ssm3j35mfv.pdf

SSM3J35MFV TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J35MFV High-Speed Switching Applications Unit mm Analog Switch Applications 1.2 0.05 1.2 V drive 0.8 0.05 Low ON-resistance R = 44 (max) (@V = -1.2 V) on GS R = 22 (max) (@V = -1.5 V) on GS 1 R = 11 (max) (@V = -2.5 V) on GS R = 8 (max) (@V = -4.0 V) o

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 ssm3j35fs.pdf

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 ssm3j35ct.pdf

SSM3J35CT TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J35CT High-Speed Switching Applications Unit mm Analog Switch Applications 1.2-V drive Low ON-resistance R = 44 (max) (@V = -1.2 V) on GS R = 22 (max) (@V = -1.5 V) on GS R = 11 (max) (@V = -2.5 V) on GS R = 8 (max) (@V = -4.0 V) on GS Absolute Maximum Ratin