SSM3J351R - параметры транзистора MOSFET, его аналоги, datasheet

SSM3J351R Datasheet (PDF)

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SSM3J351RMOSFETs Silicon P-Channel MOS (U-MOS)SSM3J351RSSM3J351RSSM3J351RSSM3J351R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 4 V drive(2) Low drain-source on-resistance: RDS(ON) = 107 m (typ.) (VGS = -10 V) RDS(ON) = 122 m (typ.) (VGS = -4.5 V) RDS(ON) = 1

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SSM3J358RMOSFETs Silicon P-Channel MOSSSM3J358RSSM3J358RSSM3J358RSSM3J358R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.8 V drive(2) Low drain-source on-resistance: RDS(ON) = 49.3 m (max) (@VGS = -1.8 V) RDS(ON) = 32.8 m (max) (@VGS = -2.5 V) RDS(ON) = 27.7 m

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SSM3J356RMOSFETs Silicon P-Channel MOS (U-MOS)SSM3J356RSSM3J356RSSM3J356RSSM3J356R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 4 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 400 m (max) (@VGS = -4.0 V) RDS(ON) = 300 m (max) (@VGS = -10 V)

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SSM3J35MFV TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J35MFV High-Speed Switching Applications Unit: mm Analog Switch Applications 1.20.05 1.2 V drive 0.80.05 Low ON-resistance : R = 44 (max) (@V = -1.2 V) on GS : R = 22 (max) (@V = -1.5 V) on GS1 : R = 11 (max) (@V = -2.5 V) on GS : R = 8 (max) (@V = -4.0 V) o