SSM3J358R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM3J358R
   Código: SPD
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 38.5 nC
   tonⓘ - Tiempo de encendido: 35 nS
   Cossⓘ - Capacitancia de salida: 135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0221 Ohm
   Paquete / Cubierta: SOT23

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SSM3J358R Datasheet (PDF)

..1. Size:373K toshiba
ssm3j358r.pdf

SSM3J358RMOSFETs Silicon P-Channel MOSSSM3J358RSSM3J358RSSM3J358RSSM3J358R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.8 V drive(2) Low drain-source on-resistance: RDS(ON) = 49.3 m (max) (@VGS = -1.8 V) RDS(ON) = 32.8 m (max) (@VGS = -2.5 V) RDS(ON) = 27.7 m

7.1. Size:224K toshiba
ssm3j356r.pdf

SSM3J356RMOSFETs Silicon P-Channel MOS (U-MOS)SSM3J356RSSM3J356RSSM3J356RSSM3J356R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 4 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 400 m (max) (@VGS = -4.0 V) RDS(ON) = 300 m (max) (@VGS = -10 V)

7.2. Size:247K toshiba
ssm3j35mfv.pdf

SSM3J35MFV TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J35MFV High-Speed Switching Applications Unit: mm Analog Switch Applications 1.20.05 1.2 V drive 0.80.05 Low ON-resistance : R = 44 (max) (@V = -1.2 V) on GS : R = 22 (max) (@V = -1.5 V) on GS1 : R = 11 (max) (@V = -2.5 V) on GS : R = 8 (max) (@V = -4.0 V) o

7.3. Size:228K toshiba
ssm3j351r.pdf

SSM3J351RMOSFETs Silicon P-Channel MOS (U-MOS)SSM3J351RSSM3J351RSSM3J351RSSM3J351R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 4 V drive(2) Low drain-source on-resistance: RDS(ON) = 107 m (typ.) (VGS = -10 V) RDS(ON) = 122 m (typ.) (VGS = -4.5 V) RDS(ON) = 1

7.4. Size:183K toshiba
ssm3j35fs.pdf

SSM3J35FS TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J35FS High-Speed Switching Applications Unit: mm Analog Switch Applications 1.2V drive Low ON-resistance : Ron = 44 (max) (@VGS = -1.2 V) : Ron = 22 (max) (@VGS = -1.5 V) : Ron = 11 (max) (@VGS = -2.5 V) : Ron = 8 (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25

7.5. Size:345K toshiba
ssm3j35ct.pdf

SSM3J35CT TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J35CT High-Speed Switching Applications Unit: mm Analog Switch Applications 1.2-V drive Low ON-resistance : R = 44 (max) (@V = -1.2 V) on GS : R = 22 (max) (@V = -1.5 V) on GS : R = 11 (max) (@V = -2.5 V) on GS : R = 8 (max) (@V = -4.0 V) on GSAbsolute Maximum Ratin

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