All MOSFET. SSM3J358R Datasheet

 

SSM3J358R Datasheet and Replacement


   Type Designator: SSM3J358R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   ton ⓘ - Turn-on Time: 35 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0221 Ohm
   Package: SOT23
 

 SSM3J358R substitution

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SSM3J358R Datasheet (PDF)

 ..1. Size:373K  toshiba
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SSM3J358R

SSM3J358RMOSFETs Silicon P-Channel MOSSSM3J358RSSM3J358RSSM3J358RSSM3J358R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.8 V drive(2) Low drain-source on-resistance: RDS(ON) = 49.3 m (max) (@VGS = -1.8 V) RDS(ON) = 32.8 m (max) (@VGS = -2.5 V) RDS(ON) = 27.7 m

 7.1. Size:224K  toshiba
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SSM3J358R

SSM3J356RMOSFETs Silicon P-Channel MOS (U-MOS)SSM3J356RSSM3J356RSSM3J356RSSM3J356R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 4 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 400 m (max) (@VGS = -4.0 V) RDS(ON) = 300 m (max) (@VGS = -10 V)

 7.2. Size:247K  toshiba
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SSM3J358R

SSM3J35MFV TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J35MFV High-Speed Switching Applications Unit: mm Analog Switch Applications 1.20.05 1.2 V drive 0.80.05 Low ON-resistance : R = 44 (max) (@V = -1.2 V) on GS : R = 22 (max) (@V = -1.5 V) on GS1 : R = 11 (max) (@V = -2.5 V) on GS : R = 8 (max) (@V = -4.0 V) o

 7.3. Size:228K  toshiba
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SSM3J358R

SSM3J351RMOSFETs Silicon P-Channel MOS (U-MOS)SSM3J351RSSM3J351RSSM3J351RSSM3J351R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 4 V drive(2) Low drain-source on-resistance: RDS(ON) = 107 m (typ.) (VGS = -10 V) RDS(ON) = 122 m (typ.) (VGS = -4.5 V) RDS(ON) = 1

Datasheet: TF3404 , TF3410 , TF3420 , TF68N75 , TF68N80 , RFM04U6P , SSM3J351R , SSM3J356R , IRF540N , SSM3J56ACT , SSM3K344R , SSM3K345R , SSM3K35AMFV , SSM3K361R , SSM3K56ACT , SSM3K7002CFU , SSM3K72KFS .

Keywords - SSM3J358R MOSFET datasheet

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