SSM3J358R MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM3J358R
Marking Code: SPD
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 38.5 nC
tonⓘ - Turn-on Time: 35 nS
Cossⓘ - Output Capacitance: 135 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0221 Ohm
Package: SOT23
SSM3J358R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM3J358R Datasheet (PDF)
ssm3j358r.pdf
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SSM3J358RMOSFETs Silicon P-Channel MOSSSM3J358RSSM3J358RSSM3J358RSSM3J358R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.8 V drive(2) Low drain-source on-resistance: RDS(ON) = 49.3 m (max) (@VGS = -1.8 V) RDS(ON) = 32.8 m (max) (@VGS = -2.5 V) RDS(ON) = 27.7 m
ssm3j356r.pdf
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SSM3J356RMOSFETs Silicon P-Channel MOS (U-MOS)SSM3J356RSSM3J356RSSM3J356RSSM3J356R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 4 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 400 m (max) (@VGS = -4.0 V) RDS(ON) = 300 m (max) (@VGS = -10 V)
ssm3j35mfv.pdf
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SSM3J35MFV TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J35MFV High-Speed Switching Applications Unit: mm Analog Switch Applications 1.20.05 1.2 V drive 0.80.05 Low ON-resistance : R = 44 (max) (@V = -1.2 V) on GS : R = 22 (max) (@V = -1.5 V) on GS1 : R = 11 (max) (@V = -2.5 V) on GS : R = 8 (max) (@V = -4.0 V) o
ssm3j351r.pdf
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SSM3J351RMOSFETs Silicon P-Channel MOS (U-MOS)SSM3J351RSSM3J351RSSM3J351RSSM3J351R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 4 V drive(2) Low drain-source on-resistance: RDS(ON) = 107 m (typ.) (VGS = -10 V) RDS(ON) = 122 m (typ.) (VGS = -4.5 V) RDS(ON) = 1
ssm3j35fs.pdf
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SSM3J35FS TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J35FS High-Speed Switching Applications Unit: mm Analog Switch Applications 1.2V drive Low ON-resistance : Ron = 44 (max) (@VGS = -1.2 V) : Ron = 22 (max) (@VGS = -1.5 V) : Ron = 11 (max) (@VGS = -2.5 V) : Ron = 8 (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25
ssm3j35ct.pdf
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SSM3J35CT TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J35CT High-Speed Switching Applications Unit: mm Analog Switch Applications 1.2-V drive Low ON-resistance : R = 44 (max) (@V = -1.2 V) on GS : R = 22 (max) (@V = -1.5 V) on GS : R = 11 (max) (@V = -2.5 V) on GS : R = 8 (max) (@V = -4.0 V) on GSAbsolute Maximum Ratin
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
![SSM3J358R](https://alltransistors.com/images/us.png)
![SSM3J358R](https://alltransistors.com/images/es.png)
![SSM3J358R](https://alltransistors.com/images/ru.png)
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