SSM3K35AMFV Todos los transistores

 

SSM3K35AMFV MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM3K35AMFV

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 0.25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2 nS

Cossⓘ - Capacitancia de salida: 6 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm

Encapsulados: SOT723 VESM

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SSM3K35AMFV datasheet

 ..1. Size:223K  toshiba
ssm3k35amfv.pdf pdf_icon

SSM3K35AMFV

SSM3K35AMFV MOSFETs Silicon N-Channel MOS SSM3K35AMFV SSM3K35AMFV SSM3K35AMFV SSM3K35AMFV 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching Analog Switches 2. Features 2. Features 2. Features 2. Features (1) 1.2 V drive (2) Low drain-source on-resistance RDS(ON) = 9.0 (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 (max) (@

 7.1. Size:223K  toshiba
ssm3k35ctc.pdf pdf_icon

SSM3K35AMFV

SSM3K35CTC MOSFETs Silicon N-Channel MOS SSM3K35CTC SSM3K35CTC SSM3K35CTC SSM3K35CTC 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching Analog Switches 2. Features 2. Features 2. Features 2. Features (1) 1.2-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 9.0 (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1

 7.2. Size:189K  toshiba
ssm3k35fs.pdf pdf_icon

SSM3K35AMFV

SSM3K35FS TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35FS High-Speed Switching Applications Unit mm Analog Switch Applications 1.2-V drive Low ON-resistance Ron = 20 (max) (@VGS = 1.2 V) Ron = 8 (max) (@VGS = 1.5 V) Ron = 4 (max) (@VGS = 2.5 V) Ron = 3 (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25 C)

 7.3. Size:198K  toshiba
ssm3k35mfv.pdf pdf_icon

SSM3K35AMFV

SSM3K35MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35MFV High-Speed Switching Applications Unit mm Analog Switch Applications 1.2 0.05 1.2 V drive 0.8 0.05 Low ON-resistance Ron = 20 (max) (@VGS = 1.2 V) Ron = 8 (max) (@VGS = 1.5 V) 1 Ron = 4 (max) (@VGS = 2.5 V) Ron = 3 (max) (@VGS = 4.0 V) 2 3 Absolu

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History: AP85T10GR-HF | HY1506I | AP3N028EN | AP4024EM | AP2045Q | AP9475GM | 2SK1443

 

 

 

 

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