All MOSFET. SSM3K35AMFV Datasheet

 

SSM3K35AMFV MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSM3K35AMFV
   Marking Code: DX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.34 nC
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: SOT723 VESM

 SSM3K35AMFV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM3K35AMFV Datasheet (PDF)

 ..1. Size:223K  toshiba
 ssm3k35amfv.pdf

SSM3K35AMFV SSM3K35AMFV

SSM3K35AMFVMOSFETs Silicon N-Channel MOSSSM3K35AMFVSSM3K35AMFVSSM3K35AMFVSSM3K35AMFV1. Applications1. Applications1. Applications1. Applications High-Speed Switching Analog Switches2. Features2. Features2. Features2. Features(1) 1.2 V drive(2) Low drain-source on-resistance: RDS(ON) = 9.0 (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 (max) (@

 7.1. Size:223K  toshiba
 ssm3k35ctc.pdf

SSM3K35AMFV SSM3K35AMFV

SSM3K35CTCMOSFETs Silicon N-Channel MOSSSM3K35CTCSSM3K35CTCSSM3K35CTCSSM3K35CTC1. Applications1. Applications1. Applications1. Applications High-Speed Switching Analog Switches2. Features2. Features2. Features2. Features(1) 1.2-V gate drive voltage.(2) Low drain-source on-resistanceRDS(ON) = 9.0 (max) (@VGS = 1.2 V, ID = 10 mA)RDS(ON) = 3.1

 7.2. Size:189K  toshiba
 ssm3k35fs.pdf

SSM3K35AMFV SSM3K35AMFV

SSM3K35FS TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35FS High-Speed Switching Applications Unit: mm Analog Switch Applications 1.2-V drive Low ON-resistance: Ron = 20 (max) (@VGS = 1.2 V) : Ron = 8 (max) (@VGS = 1.5 V) : Ron = 4 (max) (@VGS = 2.5 V) : Ron = 3 (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C)

 7.3. Size:198K  toshiba
 ssm3k35mfv.pdf

SSM3K35AMFV SSM3K35AMFV

SSM3K35MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35MFV High-Speed Switching Applications Unit: mm Analog Switch Applications 1.20.05 1.2 V drive 0.80.05 Low ON-resistance : Ron = 20 (max) (@VGS = 1.2 V) : Ron = 8 (max) (@VGS = 1.5 V) 1: Ron = 4 (max) (@VGS = 2.5 V) : Ron = 3 (max) (@VGS = 4.0 V) 23Absolu

 7.4. Size:207K  toshiba
 ssm3k35ct.pdf

SSM3K35AMFV SSM3K35AMFV

SSM3K35CT TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35CT High-Speed Switching Applications Unit: mm Analog Switch Applications 1.2-V drive Low ON-resistance : Ron = 20 (max) (@VGS = 1.2 V) : Ron = 8 (max) (@VGS = 1.5 V) : Ron = 4 (max) (@VGS = 2.5 V) : Ron = 3 (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: S-LP3415ELT1G | IPW60R125CP | SST70R380S2 | HGN195N15SL | IXFA10N60P

 

 
Back to Top